No. | Partie # | Fabricant | Description | Fiche Technique |
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GME |
Schottky Barrier Rectifiers z Metal-Semiconductor Junction With Guard Ring. z Epitaxial Construction. Pb z Lead-free For Use In Low Voltage,High Frequency Inver ters,Free Wheeling,and Polarity Protection Aapplications. z Low Forward Voltage Drop,Low Swiotching Losses. |
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GME |
Schottky Barrier Rectifiers z Metal-Semiconductor Junction With Guard Ring. z Epitaxial Construction. Pb z Lead-free For Use In Low Voltage,High Frequency Inver ters,Free Wheeling,and Polarity Protection Aapplications. z Low Forward Voltage Drop,Low Swiotching Losses. |
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GME |
Schottky Barrier Rectifiers z Metal-Semiconductor Junction With Guard Ring. z Epitaxial Construction. Pb z Lead-free For Use In Low Voltage,High Frequency Inver ters,Free Wheeling,and Polarity Protection Aapplications. z Low Forward Voltage Drop,Low Swiotching Losses. |
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|
GME |
Schottky Barrier Rectifiers z Metal-Semiconductor Junction With Guard Ring. z Epitaxial Construction. Pb z Lead-free For Use In Low Voltage,High Frequency Inver ters,Free Wheeling,and Polarity Protection Aapplications. z Low Forward Voltage Drop,Low Swiotching Losses. |
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Vishay Telefunken |
13 mm Seven Segment Display D D D D D D D Evenly lighted segments Grey package surface Untinted segments Luminous intensity categorized Yellow and green categorized for color Wide viewing angle Suitable for DC and high peak current Applications Panel meters Test- and measure- |
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Vishay Telefunken |
13 mm Seven Segment Display D D D D D D D Evenly lighted segments Grey package surface Untinted segments Luminous intensity categorized Yellow and green categorized for color Wide viewing angle Suitable for DC and high peak current Applications Panel meters Test- and measure- |
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|
|
GME |
Schottky Barrier Rectifiers z Metal-Semiconductor Junction With Guard Ring. z Epitaxial Construction. Pb z Lead-free For Use In Low Voltage,High Frequency Inver ters,Free Wheeling,and Polarity Protection Aapplications. z Low Forward Voltage Drop,Low Swiotching Losses. |
|
|
|
GME |
Schottky Barrier Rectifiers z Metal-Semiconductor Junction With Guard Ring. z Epitaxial Construction. Pb z Lead-free For Use In Low Voltage,High Frequency Inver ters,Free Wheeling,and Polarity Protection Aapplications. z Low Forward Voltage Drop,Low Swiotching Losses. |
|
|
|
GME |
Schottky Barrier Rectifiers z Metal-Semiconductor Junction With Guard Ring. z Epitaxial Construction. Pb z Lead-free For Use In Low Voltage,High Frequency Inver ters,Free Wheeling,and Polarity Protection Aapplications. z Low Forward Voltage Drop,Low Swiotching Losses. |
|
|
|
GME |
Schottky Barrier Rectifiers z Metal-Semiconductor Junction With Guard Ring. z Epitaxial Construction. Pb z Lead-free For Use In Low Voltage,High Frequency Inver ters,Free Wheeling,and Polarity Protection Aapplications. z Low Forward Voltage Drop,Low Swiotching Losses. |
|
|
|
GME |
Schottky Barrier Rectifiers z Metal-Semiconductor Junction With Guard Ring. z Epitaxial Construction. Pb z Lead-free For Use In Low Voltage,High Frequency Inver ters,Free Wheeling,and Polarity Protection Aapplications. z Low Forward Voltage Drop,Low Swiotching Losses. |
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