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GME PBS DataSheet

No. Partie # Fabricant Description Fiche Technique
1
PBSS4160T

GME
NPN Low VCEsat Transistor
z Low collector-emitter saturation voltage VCEsat Pb z High collector current capability IC and ICM Lead-free z High efficiency, reduces heat generation z Reduces printed-circuit board area required PBSS4160T APPLICATIONS z Major application s
Datasheet
2
PBSS5160T

GME
PNP Transistor
z Low collector-emitter saturation voltage VCEsat z High collector current capability IC and ICM z High efficiency, reduces heat generation z Reduces printed-circuit board area required Pb Lead-free PBSS5160T APPLICATIONS z Major application segme
Datasheet



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