| No. | Partie # | Fabricant | Description | Fiche Technique |
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GME |
N-Channel Power Mosfet RDS(ON) =2.4Ω@ VGS = 10V Ultra low gate charge ( typical 15 nC ) Pb Lead-free Low reverse transfer Capacitance ( CRSS = typical 6.5 pF ) Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness |
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DGME |
N-Channel MOSFET oldering Symbol VDSS Tc=25℃ ID Tc=100℃ IDM VGS EAS IAR EAR dv/dt Tc=P2D5℃ AboPvDe(D2F5) ℃ TO-251/TO-252 TO-220/TO-262 TO-220F TO-251/TO-252 TO-220/TO-262 TO-220F TJ，TSTG TL Value 600 5* 2.5* 20 ±30 218 4.0 10 4.5 51 100 33 0.39 0.8 0.26 |
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GME |
N-Channel Power Mosfet RDS(ON) =2.4Ω@ VGS = 10V Ultra low gate charge ( typical 15 nC ) Pb Lead-free Low reverse transfer Capacitance ( CRSS = typical 6.5 pF ) Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness |
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DGME |
N-CHANNEL ENHANCEMENT MODE MOSFET |
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DGME |
N-CHANNEL ENHANCEMENT MODE MOSFET |
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