| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
GFD |
N-Channel MOSFETS • High density cell design for ultra low Rdson. • Fully characterized avalanche voltage and current. • Good stability and uniformity with high EAS. • Excellent package for good heat dissipation. • Special process technology for high ESD capability. |
|