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INCHANGE |
NPN Transistor kdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V ICBO Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC |
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LGE |
NPN Transistor 23 1 3. BASE High Breakdown Voltage : VCEO=150V(Min.) Low Output Capacitance : Cob=5.0pF(Max.) High Transition Frequency : fT=120MHz(Typ.). KTC3206 TO-92L Transistor (NPN) TO-92L 4.700 5.100 7.800 8.200 0.600 0.800 0.350 0.550 13.800 14 |
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INCHANGE |
NPN Transistor 240V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5mA; VCE= 10V hFE-2 DC Current Gain IC= 20mA; VCE= 10V fT Current-Gain—Bandwidth Product IC= 20mA; VCE= 20V COB Output Capacitance IE= 0; VCB= 20V, ftest |
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SeCoS |
NPN Silicon General Purpose Transistor Low collector to emitter saturation voltage VCE(sat). Audio power amplifier High Current CLASSIFICATION OF hFE Product-Rank KTC3205-O Range 100~200 KTC3205-Y 160~320 TO-92L GH J AD 1Emitter 2Collector 3Base B K E CF REF. A B C D E F G H J |
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Inchange Semiconductor |
Silicon NPN Power Transistors oltage IC= 500mA; VCE= 5V ICBO Collector Cutoff Current VCB= 180V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE DC Current Gain IC= 100mA; VCE= 5V hFE Classifications O Y 70-140 120-240 KTC4370A MIN TYP. MAX UNIT 180 V 1.5 |
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Inchange Semiconductor |
Silicon NPN Power Transistors tage IC= 500mA; VCE= 5V ICBO Collector Cutoff Current VCB= 160V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE DC Current Gain IC= 100mA ; VCE= 5V hFE Classifications O Y 70-140 120-240 KTC4370 MIN TYP. MAX UNIT 160 V 1.5 |
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HOTTECH |
GENERAL PURPOSE TRANSISTOR Low Saturation Voltage High Speed Switching Time Complementary to HEA1666 HETC4379(NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 50 Collector-Emitte |
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Inchange Semiconductor |
Silicon NPN Power Transistors |
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Comchip |
General Purpose Transistor - High hFE - Low noise Circuit Diagram 1 Base Collector 3 2 Emitter 0.055(1.40) 0.047(1.20) SOT-23 0.118(3.00) 0.110(2.80) 3 1 : BASE 2 : EMITTER 3 : COLLECTOR 12 0.079(2.00) 0.071(1.80) Maximum Ratings (at TA=25°C unless otherwise noted) Par |
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Inchange Semiconductor |
Silicon NPN Power Transistors wn Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 |
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Weitron Technology |
NPN General Purpose Transistors fer Ration VCE = 1V, I C = 100mA www.DataSheet4U.com VCE(sat) - - 0.5 V VBE(ON) hFE 0.5 100 - 0.8 320 V SMALL-SIGNAL CHARACTERISTICS Transition Frequence VCE = 5V, IC =10mA, f = 100MHz Collector Output Capacitance VCB =10V, IE = 0, f = 1MH |
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HOTTECH |
GENERAL PURPOSE TRANSISTOR Small Flat Package High Voltage Switching Application High Voltage High Transition Frequency MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 200 Collector-Emitter Voltage VCEO 150 |
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Lunsure Electronic Technology |
NPN General Purpose Application • High DC Current Gain: hFE=70~700 • Excellent hFE Linearity: hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) • Low Noise: NF=1.0dB(Typ.), 10dB(Max.) • Complementary to KTA1267 Pin Configuration Bottom View CB E Maximum Ratings Symbol VCEO VCBO VEBO IC IE PC TJ |
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INCHANGE |
NPN Transistor PARAMETER CONDITIONS V(BR)CBO Collector-Base breakdown voltage IC=10uA ; IB=0 V(BR)CEO Collector-emitter breakdown voltage IC=1mA ; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=10uA ; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC=20 |
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Inchange Semiconductor |
Silicon NPN Power Transistors Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 500mA; VCE= 5V ICBO Collector Cutoff Current VCB= 160V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE DC C |
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Inchange Semiconductor |
Silicon NPN Power Transistors 1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= |
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Inchange Semiconductor |
Silicon NPN Power Transistors C= 1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB |
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Inchange Semiconductor |
Silicon NPN Power Transistors ollector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A ICBO Collector Cutoff Current VCB= 170V ; IE=0 IEBO Emitter Cutoff Current VEB= 5V ; IC=0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V |
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Inchange Semiconductor |
Silicon NPN Power Transistors MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 230 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A 3.0 V VBE(on) Base-Emitter On Voltage IC= 7A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= |
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Inchange Semiconductor |
Silicon NPN Power Transistors |
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