| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fujitsu Component |
C-Band Power GaAs FET • • • • • High Output Power: P1dB = 31.8dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general purpose applicatio |
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