| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fuji Electric |
N-CHANNEL SILICON POWER MOSFET Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability |
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