No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
First Silicon |
Bi-Directional Triode Thyristor • Blocking Voltage to 600 V • On-State Current Rating of 6A RMS at 100℃ • Uniform Gate Trigger Currents in Three Quadrants • High Immunity to dV/dt-1500V/us minimum at 125℃ • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Pack |
|
|
|
First Silicon |
PNP EPITAXIAL PLANAR TRANSISTOR • High Breakdown Voltage: VCEO=400(Min.) at IC=1mA COLLECTOR 3 DEVICE MARKING 1 BASE MMBTA94 = 4Z Absolute Maximum Ratings 2 EMITTER • Maximum Temperatures Storage Temperature .................................................................... |
|