No. | Partie # | Fabricant | Description | Fiche Technique |
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American First Semiconductor |
(EF101PG - EF105PG) 1.0A Glass Passivated Sufrace Mount Efficient Fast Rectifiers • Low profile surface mounted application in order to optimize board space. • Trr less than 25ns for high efficiency • High current & surge capability. • Low forward dropdown voltage • Glass passivated chip junction. • Lead-free parts meet environmen |
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American First Semiconductor |
Controllers consisting of input and reference undervoltage lockouts each with hysteresis, cycle –by –cycle current limiting, programmable output deadtime, and a latch for single pulse metering. These devices are available in an 8 –pin dual –in –line and surface mount |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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American First Semiconductor |
Controllers consisting of input and reference undervoltage lockouts each with hysteresis, cycle –by –cycle current limiting, programmable output deadtime, and a latch for single pulse metering. These devices are available in an 8 –pin dual –in –line and surface mount |
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American First Semiconductor |
(FMEG101DG - FMEG105DG) 1.0A Glass Passivated Sufrace Mount Efficient Fast Rectifiers • Batch process design, excellent power dissipation offers. better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Tiny plastic SMD package. • High current capability. • Fa |
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American First Semiconductor |
(EF101PG - EF105PG) 1.0A Glass Passivated Sufrace Mount Efficient Fast Rectifiers • Low profile surface mounted application in order to optimize board space. • Trr less than 25ns for high efficiency • High current & surge capability. • Low forward dropdown voltage • Glass passivated chip junction. • Lead-free parts meet environmen |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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American First Semiconductor |
Controllers consisting of input and reference undervoltage lockouts each with hysteresis, cycle –by –cycle current limiting, programmable output deadtime, and a latch for single pulse metering. These devices are available in an 8 –pin dual –in –line and surface mount |
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National Semiconductor |
64 x 4 First-In First-Out Buffer Memory Y Separate input and output clocks Y Parallel input and output Y Expandable without external logic Y 15 MHz data rate Y Supply current 160 mA max Y Available in SOIC (300 mil only) Commercial 74F413PC Military 54F413DM (Note 1) Package Number N16E |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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American First Semiconductor |
(FFM101G - FFM107G) 1.0A Surface Mount Fast Recovery Rectifiers • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • High current capability. • Fast switching for high efficie |
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American First Semiconductor |
(FMEG101DG - FMEG105DG) 1.0A Glass Passivated Sufrace Mount Efficient Fast Rectifiers • Batch process design, excellent power dissipation offers. better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Tiny plastic SMD package. • High current capability. • Fa |
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American First Semiconductor |
3.0A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitax |
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American First Semiconductor |
3.0A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitax |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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