| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
SCHOTTKY BARRIER RECTIFIER • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection 1 TO220 June 2008 1.Anode 3.Anode 2. Cathode Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VRRM VR I |
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Fairchild Semiconductor |
FSDM0565R • Internal Avalanche Rugged Sense FET • Advanced Burst-Mode operation consumes under 1 W at 240VAC & 0.5W load • Precision Fixed Operating Frequency (66kHz) • Internal Start-up Circuit • Pulse by Pulse Current Limiting • Abnormal Over Current Protect |
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Fairchild Semiconductor |
Fairchild Power Switch(FPS) • Precision Fixed Operating Frequency (100/67/50kHz) • Low Start-up Current(Typ. 100uA) • Pulse by Pulse Current Limiting • Over Current Protection • Over Voltage Protection (Min. 25V) • Internal Thermal Shutdown Function • Under Voltage Lockout • In |
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Fairchild Semiconductor |
NPN Silicon Transistor itance fT Current Gain Bandwidth Product tON Turn On Time tSTG Storage Time tF Fall Time * Pulse test: PW≤300µs, Duty cycle≤2% VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, I |
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Fairchild Semiconductor |
Hex Inverting Gates the device cannot be guaranteed. The device should not be operated at these limits. The parametric values defined in the Electrical Characteristics tables are not guaranteed at the absolute maximum ratings. The “Recommended Operating Conditions” tabl |
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Fairchild Semiconductor |
Green Current Mode PWM Controller • Green Current Mode PWM Control • Low Operating Current: Max 4mA • Burst Mode Operation • Internal High Voltage Start-up Switch • Under Voltage Lockout (UVLO): 12V/8V • Latch Protection & Soft Start Function • Over Voltage Protection: 19V • Operatin |
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Fairchild Semiconductor |
Ultrafast IGBT • High speed switching • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20A • High input impedance • CO-PAK, IGBT with FRD : trr = 42ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C GC E |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V • Low gate charge ( typical 15 nC) • Low Crss ( typical 6.5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability D GS D2-PAK FQB Series GDS I2-PAK FQI Series D ! G! ● ◀▲ ● ● ! S Ab |
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Fairchild Semiconductor |
High Voltage Fast-Switching NPN Power Transistor • High Voltage High Speed Power Switch Application • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 TO-220 1.Base 2.Collector 3.Emitter Ordering Information Part Number FJP13007TU |
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Fairchild Semiconductor |
3-Terminal 0.1A Positive Voltage Regulator • Maximum Output Current of 100mA • Output Voltage of 5V, 6V, 8V, 12V, 15V, 18V and 24V • Thermal Overload Protection • Short Circuit Current Limiting • Output Voltage Offered in ±5% Tolerance Description The MC78LXXA/LM78LXXA/MC78L05AA series of fi |
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Fairchild Semiconductor |
Single Timer • High-Current Drive Capability: 200 mA • Adjustable Duty Cycle • Temperature Stability of 0.005%/°C • Timing From μs to Hours • Turn off Time Less Than 2 μs Applications • Precision Timing • Pulse Generation • Delay Generation • Sequential Timing D |
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Fairchild Semiconductor |
Single Timer |
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Fairchild Semiconductor |
40A Field Stop IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC, Microwave Oven, Telecom, ESS General Description Using novel f |
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Fairchild Semiconductor |
LED Backlight Driving Boost Switch Single-Channel Boost LED Switch Internal Power MOSFET for PWM Dimming: RDS(on) = 3.4 Ω at VGS=10 V, BVDSS=400 V Current Mode PWM Control Internal Programmable Slope Compensation Wide Supply Voltage Range: 10 V to 35 V LED Current Regulati |
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Fairchild Semiconductor |
FJAF6810D ltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions VCB=1500V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=300mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=6A IC |
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Fairchild Semiconductor |
Small Signal Diode 4AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) DO-204AH (DO-35) |
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Fairchild Semiconductor |
(IN4728A - IN4764A) Zener Diode .8 18.9 21 Test Current IZ (mA) 76 69 64 58 53 49 45 41 37 34 31 28 25 23 21 19 17 15.5 14 12.5 Max. Zener Impedance ZZ @ I Z (Ω) 10 10 9 9 8 7 5 2 3.5 4 4.5 5 7 8 9 10 14 16 20 22 Leakage Current IR (µA) 100 100 50 10 10 10 10 10 10 10 10 10 10 5 |
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Fairchild Semiconductor |
Single Timer • High-Current Drive Capability: 200 mA • Adjustable Duty Cycle • Temperature Stability of 0.005%/°C • Timing From μs to Hours • Turn off Time Less Than 2 μs Applications • Precision Timing • Pulse Generation • Delay Generation • Sequential Timing D |
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Fairchild Semiconductor |
Gate-Driver Floating Channel for Bootstrap Operation to +600V 3A/3A Sourcing/Sinking Current Driving Capability Common-Mode dv/dt Noise Canceling Circuit 3.3V Logic Compatible Separate Logic Supply (VDD) Range from 3.3V to 20V Under-Voltage Lockout f |
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Fairchild Semiconductor |
Quad 2-Input OR Gate C Note 1: The “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. The device should not be operated at these limits. The parametric values defined in the Electrical Characteristics tables are not gu |
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