| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
Motion SPM 5 SuperFET Series • UL Certified No. E209204 (UL1557) • 600 V RDS(on) = 700 mMax SuperFET MOSFET 3- Phase Inverter with Gate Drivers and Protection • Built-in Bootstrap Diodes Simplify PCB Layout • Separate Open-Source Pins from Low-Side MOSFETS for Three-Phase Cur |
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Fairchild Semiconductor |
Motion SPM-5 module • UL Certified No. E209204 (UL1557) • 600 V RDS(on) = 530 mMax SuperFET MOSFET 3- Phase Inverter with Gate Drivers and Protection • Built-in Bootstrap Diodes Simplify PCB Layout • Separate Open-Source Pins from Low-Side MOSFETS for Three-Phase Cur |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Low RDS(ON) : 0.581 Ω (Typ.) 1 2 3 SFS9630 BVDSS = -200 V RDS(on) = |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -250V Low RDS(ON) : 0.876 Ω (Typ.) 1 2 3 SFS9634 BVDSS = -250 V RDS(on) = |
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Fairchild Semiconductor |
Advanced Power MOSFET ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge o ! 175 C Operating Temperature ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ! Low RDS(ON) : 0.22 Ω (T |
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Fairchild Semiconductor |
Advanced Power MOSFET n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge o n 175 C Operating Temperature n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Low RDS(ON) : 0.912 Ω |
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Fairchild Semiconductor |
Advanced Power MOSFET n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge o n 175 C Operating Temperature n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Low RDS(ON) : 0.444 Ω |
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Fairchild Semiconductor |
Advanced Power MOSFET n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge o n 175 C Operating Temperature n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Low RDS(ON) : 0.225 Ω |
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Fairchild Semiconductor |
Advanced Power MOSFET n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge o n 175 C Operating Temperature n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Low RDS(ON) : 0.161 Ω |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Low RDS(ON) : 2.25 Ω (Typ.) 1 2 3 SFS9610 BVDSS = -200 V RDS(on) = |
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Fairchild Semiconductor |
Advanced Power MOSFET ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V ν Low RDS(ON) : 3.5 Ω (Typ.) 1 2 3 SFS9614 BVDSS = -250 |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Low RDS(ON) : 1.111 Ω (Typ.) 1 2 3 SFS9620 BVDSS = -200 V RDS(on) = |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -250V Low RDS(ON) : 1.65 Ω (Typ.) 1 2 3 SFS9624 BVDSS = -250 V RDS(on) = |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Low RDS(ON) : 0.344 Ω (Typ.) 1 2 3 SFS9640 BVDSS = -200 V RDS(on) = |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -250V Low RDS(ON) : 0.549 Ω (Typ.) 1 2 3 SFS9644 BVDSS = -250 V RDS(on) = |
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Fairchild Semiconductor |
Advanced Power MOSFET n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge o n 175 C Operating Temperature n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -60V n Low RDS(ON) : 0.362 Ω ( |
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Fairchild Semiconductor |
Advanced Power MOSFET n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge o n 175 C Operating Temperature n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -60V n Low RDS(ON) : 0.206 Ω ( |
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Fairchild Semiconductor |
Advanced Power MOSFET ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge o ν 175 C Operating Temperature ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ν Low RDS(ON) : 0.106 Ω ( |
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