Fairchild Semiconductor RMP fiche technique

No.	Partie #	Fabricant	Description
1	RMPA0967	Fairchild Semiconductor	Power Edg TM Power Amplifier Module ■ Single positive-supply operation with low power and shutdown modes ■ 39% CDMA/WCDMA efﬁciency at +28 dBm average output power ■ 52% AMPS mode efﬁciency at +31 dBm output power ■ Lead-free RoHS compliant 3 x 3 x 1mm leadless package ■ Internally mat
2	RMPA0963	Fairchild Semiconductor	Cellular CDMA CDMA2000-1X and WCDMA Power Amplifier Module ■ 38% CDMA/WCDMA efficiency at +28 dBm Pout ■ 14% CDMAA/WCDMA efficiency (80 mA total current) at +16 dBm Pout ■ Meets HSDPA performance requirements ■ Linear operation in low-power mode up to +19 dBm ■ 50% AMPS mode efficiency at +31 dBm Pout ■ Low
3	RMPA1965	Fairchild Semiconductor	CDMA2000-1X and WCDMA PowerEdge Power Amplifier Module ■ Single positive-supply operation with low power and shutdown modes ■ 40% CDMA/WCDMA efficiency at +28 dBm average output power ■ Compact lead-free compliant low-profile package (3.0 x 3.0 x 1.0 mm nominal) ■ Internally matched to 50Ω and DC blocked
4	RMPA1966	Fairchild Semiconductor	RMPA1966 I-Lo TM WCDMA Band II Power Amplifier Module ■ 40% WCDMA efﬁciency at +28.5dBm Pout ■ 20% WCDMA efﬁciency (58mA total current) at General Description The RMPA1966 Power Ampliﬁer Module (PAM) is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting UMTS/WCDMA/HSDPA appli
5	RMPA2458	Fairchild Semiconductor	InGaP HBT Low Current Linear Power Amplifier ■ ■ ■ ■ ■ ■ ■ ■ ■ 31.5dB small signal gain 27dBm output power @ 1dB compression 103mA total current at 19dBm modulated power out 2.5% EVM at 19 dBm modulated power out 3.3V collector supply operation 2.9V mirror supply operation Power saving shutdown
6	RMPA0951AT	Fairchild Semiconductor	3V Cellular CDMA PowerEdge Power Amplifier Module • • • • • • • Single positive-supply operation High dual-mode (AMPS/CDMA) efficiency Excellent linearity Small size: 6.0 x 6.0 x 1.5 mm3 LCC package 50Ω matched input and output module Adjustable quiescent current and power-down mode Suitable for CDM
7	RMPA0959	Fairchild Semiconductor	CDMA and CDMA2000-1X PowerEdge Power Amplifier Module ■ Single positive-supply operation with low power and shutdown modes ■ 39% CDMA efﬁciency at +28dBm average output power ■ 53% AMPS mode efﬁciency at +31dBm output power ■ Lead-free RoHS compliant 4 x 4 x 1.5mm leadless ■ Internally matched to 50Ω an
8	RMPA0965	Fairchild Semiconductor	CDMA and CDMA2000-1X PowerEdge Power Amplifier Module a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process. Features • Single positive
9	RMPA1850	Fairchild Semiconductor	Quad Band GSM/GPRS Power Amplifier Module I Quad band, matched module I High efﬁciency- 55% GSM850/900, 50% DCS/PCS I Integrated power control function I I I I I Compact 7101.6mm module InGaP HBT technology GPRS class 12 capable Ruggedness 10:1 50 dB power control range General Descriptio
10	RMPA1959	Fairchild Semiconductor	PCS 3.4V CDMA & CDMA2000-1X PowerEdge Power Amplifier Module advanced DC power management to reduce current consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology. Features • Single positive-suppl
11	RMPA2265	Fairchild Semiconductor	Dual Band WCDMA Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using Fairchild’s InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process. Features • Si
12	RMPA2450	Fairchild Semiconductor	2.4-2.5 GHz GaAs MMIC Power Amplifier • • • • • • 35% Power Added Efficiency 31dBm Output Power (P1dB) at Vd = +7V 28dBm Output Power (P1dB) at Vd = +5V No external RF matching components Small Package Outline: 0.28" x 0.28" x 0.07" Thermal Resistance (Channel to Case): 33°C/W Device A
13	RMPA2550	Fairchild Semiconductor	2.4-2.5 GHz and 5.15-5.85 GHz Dual Band InGaP HBT Linear Power Amplifier • Dual band operation in a single package design • 26 dB modulated gain 2.4 to 2.5 GHz band Electrical Characteristics1,3 802.11g/a OFDM Modulation (with 176 µs burst time, 100µs idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth Parameter Frequency Su
14	RMPA29000	Fairchild Semiconductor	27-30 GHZ 1 Watt Power Amplifier MMIC • 23dB small signal gain (typ.) • 30dBm Pout at 1dB compression (typ.) • Circuit contains individual source vias • Chip size 5.20mm x 2.95mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+5V Typical) Neg
15	RMPA1963	Fairchild Semiconductor	CDMA2000-1X and WCDMA Power Amplifier Module ■ 38% CDMA/WCDMA efficiency at +28 dBm Pout ■ 14% CDMA/WCDMA efficiency (85 mA total current) at +16 dBm Pout ■ Meets HSDPA performance requirements ■ Linear operation in low-power mode up to +19 dBm ■ Low quiescent current (Iccq): 25 mA in low-power
16	RMPA1967	Fairchild Semiconductor	CDMA2000-1X and WDCMA Power Edge Power Amplifier Module ■ Single positive-supply operation and low power and shutdown modes ■ 40% CDMA/WCDMA efficiency at +28 dBm average output power ■ Compact lead-free compliant, LCC package(3.0 x 3.0 x 1.0 mm nominal) ■ Internally matched to 50 Ohms and DC blocked RF i
17	RMPA0966	Fairchild Semiconductor	Power Amplifier Module ■ 42% CDMA/WCDMA efﬁciency at +28 dBm Pout ■ 21% CDMA/WCDMA efﬁciency (56 mA total current) at +16 dBm Pout ■ Meets HSDPA performance requirements ■ 50% AMPS mode efﬁciency at +31 dBm Pout ■ Low quiescent current (Iccq): 15 mA in low-power mode ■ Sin
18	RMPA1759	Fairchild Semiconductor	Korean-PCS PowerEdge Power Amplifier Module a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process. Features • Single positive
19	RMPA1765	Fairchild Semiconductor	Power Edge Power Amplifier Module ■ Single positive-supply operation and low power and shutdown modes ■ 38% CDMA/WCDMA efﬁciency at +28 dBm average output power ■ Compact lead-free compliant LCC package3.0 x 3.0 x 1.0 mm with industry standard pinout ■ Internally matched to 50 Ohms a
20	RMPA2263	Fairchild Semiconductor	WCDMA Power Amplifier Module ■ 40% WCDMA efficiency at +28 dBm Pout ■ 14% WCDMA efficiency (85 mA total current) at +16 dBm Pout ■ Linear operation in low-power mode up to +19 dBm ■ Low quiescent current (Iccq): 25 mA in low-power mode ■ Meets UMTS/WCDMA performance requirements