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Fairchild Semiconductor |
MOSFET Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -5 A Max rDS(on) = 50 mΩ at VGS = -2.5 V, ID = -4 A Max rDS(on) = 65 mΩ at VGS = -1.8 V, ID = -3 A Max rDS(on) = 100 mΩ at VGS = -1.5 V, ID = -2 A Low profile: 0.55 mm maximum in the new package Mic |
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Fairchild Semiconductor |
MOSFET Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin HBM ESD protection level > 2 |
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Fairchild Semiconductor |
PNP General Purpose Amplifier ory should be consulted on applications involving pulsed or low duty cycle operations. ã 1997 Fairchild Semiconductor Corporation PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A PNP General Purpose Amplifier (continued) Electrical Characteris |
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Fairchild Semiconductor |
PNP Amplifier function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The ab |
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Fairchild Semiconductor |
PNP Darlington Transistor TA = 25°C unless otherwise noted Symbol Characteristic PD Total Device Dissipation Derate above 25°C RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient MPSA65 625 5.0 83.3 200 Max *MMBTA65 350 2.8 357 *De |
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Fairchild Semiconductor |
Dual P-Channel MOSFET Max rDS(on) = 60 mΩ at VGS = -4.5 V, ID = -3.6 A Max rDS(on) = 80 mΩ at VGS = -2.5 V, ID = -3.0 A Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -2.0 A Max rDS(on) = 170 mΩ at VGS = -1.5 V, ID = -1.0 A Low Profile-0.55 mm maximum - in the new p |
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Fairchild Semiconductor |
Dual P-Channel PowerTrench MOSFET Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A Low profile: 0.55 mm maximum in the new |
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Fairchild Semiconductor |
NPN General Purpose Amplifier • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. C E SOT-23 Mark:1P B Figure 1. MMBT2222A Device Package C SOT-223 E C B Figure 2. PZT2222A Device Package O |
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Fairchild Semiconductor |
NPN General Purpose Amplifier |
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Fairchild Semiconductor |
NPN General Purpose Amplifier • This device is designed for general-purpose amplifier applications at collector currents to 300 mA. • Sourced from process 12. MPSA06 MMBTA06 C PZTA06 C EBC TO-92 Ordering Information Part Number MPSA06 MMBTA06 PZTA06 Top Mark MPSA06 1G A0 |
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Fairchild Semiconductor |
NPN Darlington Transistor therwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA13 625 5.0 83.3 200 Max *MMBTA13 350 2.8 357 **PZTA13 1,000 8.0 125 Units mW mW/°C °C/W °C/W |
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Fairchild Semiconductor |
NPN Darlington Transistor less otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA14 625 5.0 83.3 200 Max *MMBTA14 350 2.8 357 **PZTA14 1,000 8.0 125 Units mW mW/°C °C/W |
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Fairchild Semiconductor |
NPN General Purpose Amplifier |
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Fairchild Semiconductor |
NPN Darlington Transistor |
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Fairchild Semiconductor |
NPN High Voltage Amplifier • This device is designed for application as a video output and other high-voltage applications. • Sourced from process 48. MPSA42 MMBTA42 C PZTA42 C EBC TO-92 E B SOT-23 Mark: 1D E C B SOT-223 Ordering Information Part Number MPSA42 MMBTA |
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Fairchild Semiconductor |
PNP General Purpose Amplifier rwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA55 625 5.0 83.3 200 Max *MMBTA55 350 2.8 357 **PZTA55 1,000 8.0 125 Units mW mW/°C °C/W °C/W *D |
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Fairchild Semiconductor |
PNP General Purpose Amplifier TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value -80 -80 -4.0 -500 -55 to +150 Unit V V V mA °C Notes: 1. These ratings are |
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Fairchild Semiconductor |
PNP Darlington Transistor RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA63 625 5.0 83.3 200 Max *MMBTA63 350 2.8 357 **PZTA63 1,000 8.0 1 |
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Fairchild Semiconductor |
PNP Darlington Transistor rwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA64 625 5.0 83.3 200 Max *MMBTA64 350 2.8 357 **PZTA64 1,000 8.0 125 Units mW mW/°C °C/W °C/W *D |
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Fairchild Semiconductor |
PNP High Voltage Amplifier ector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value -300 -300 -5 -500 -55 to +150 Unit V V V mA °C Notes: 1. These ratings are based on a maximum junction temperature of 150 |
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