| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
500V P-Channel MOSFET • -2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V • Low gate charge ( typical 18 nC) • Low Crss ( typical 9.5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant I-PAK FQU Series G! S ! ● ● ▶▲ ● ! D Absolute Maximu |
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Fairchild Semiconductor |
60V N-Channel MOSFET • • • • • • • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-220 |
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Fairchild Semiconductor |
500V P-Channel MOSFET • • • • • • -2.7A, -500V, RDS(on) = 4.9Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability S ! ● ● G! ▶ ▲ ● G DS TO-220 FQP Series ! D Absolute Maximum Rati |
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Fairchild Semiconductor |
500V P-Channel MOSFET • • • • • • -1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability S ! ● ● G! G DS ▶ ▲ ● TO-220 FQP Series ! D Absolute Maximum Ratin |
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Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET • 52.4 A, 60 V, RDS(on) = 21 mΩ (Max.) @ VGS = 10 V, ID = 26.2 A • Low Gate Charge (Typ. 24.5 nC) • Low Crss (Typ. 90 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unles |
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Fairchild Semiconductor |
NPN Darlington Transistor sat) Parameter Test Conditions IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCE = 45V, VBE = 0 VEB = 4.0V, IC = 0 IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 500mA, IB = 0.5mA IC = 500mA, IB = 0.5mA 1000 2000 1.3 1.9 V V Min. 60 5 50 50 Typ. Max. Units |
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Fairchild Semiconductor |
N-Channel Power MOSFETs • 50A, 50V • rDS(ON) = 0.022Ω • UIS SOA Rating Curve (Single Pulse) • Design Optimized for 5V Gate Drive • Can be Driven Directly from CMOS, NMOS, TTL Circuits • Compatible with Automotive Drive Requirements • SOA is Power Dissipation Limited • Nano |
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Fairchild Semiconductor |
500V P-Channel MOSFET • • • • • • -1.2A, -500V, RDS(on) = 10.5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability S D G! ! ● ● ▶ ▲ ● G S D-PAK FQD Series I-PAK G D S FQU Series ! |
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Fairchild Semiconductor |
500V P-Channel MOSFET • • • • • • -2.7A, -500V, RDS(on) = 4.9Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S ! ● ● G! G S ▶ ▲ ● D2-PAK FQB Series G D S I2-PAK FQI Series ! |
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Fairchild Semiconductor |
500V P-Channel MOSFET • • • • • • -1.03A, -500V, RDS(on) = 10.5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability S ! ● ● G! ▶ ▲ ● GD S TO-220F FQPF Series ! D Absolute Maximum |
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Fairchild Semiconductor |
500V P-Channel MOSFET • -2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V • Low gate charge ( typical 18 nC) • Low Crss ( typical 9.5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant I-PAK FQU Series G! S ! ● ● ▶▲ ● ! D Absolute Maximu |
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Fairchild Semiconductor |
N-Channel MOSFET • 50A, 60V • rDS(ON) = 0.022Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE ©2002 Fairchil |
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Fairchild Semiconductor |
500V P-Channel MOSFET • -2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V • Low gate charge ( typical 18 nC) • Low Crss ( typical 9.5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Qualified to AEC Q101 • RoHS Compliant S D! GS D-PAK Absolute Maxim |
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Fairchild Semiconductor |
High Voltage and High Reliability MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUP |
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Fairchild Semiconductor |
500V P-Channel MOSFET • • • • • • -1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S ! ● ● G! G S ▶ ▲ ● D2-PAK FQB Series G D S I2-PAK FQI Series |
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Fairchild Semiconductor |
500V P-Channel MOSFET • • • • • • -2.7A, -500V, RDS(on) = 4.9Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S ! ● ● G! G S ▶ ▲ ● D2-PAK FQB Series G D S I2-PAK FQI Series ! |
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Fairchild Semiconductor |
500V P-Channel MOSFET • • • • • • -1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S ! ● ● G! G S ▶ ▲ ● D2-PAK FQB Series G D S I2-PAK FQI Series |
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Fairchild Semiconductor |
500V P-Channel MOSFET • • • • • • -1.9A, -500V, RDS(on) = 4.9Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability S ! ● ● G! ▶ ▲ ● GD S TO-220F FQPF Series ! D Absolute Maximum Rat |
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Fairchild Semiconductor |
500V P-Channel MOSFET • • • • • • -1.2A, -500V, RDS(on) = 10.5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability S D G! ! ● ● ▶ ▲ ● G S D-PAK FQD Series I-PAK G D S FQU Series ! |
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Fairchild Semiconductor |
NPN Silicon Transistor • High-Voltage and Switching Applications • High Sustaining Voltage: VCEO(sus) = 250 V, 300 V, 350 V, 400 V • 1 A Rated Collector Current 1 TO-220 1.Base 2.Collector 3.Emitter Ordering Information Part Number TIP47 TIP47TU TIP48 TIP48TU TIP49 TIP50 |
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