| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
2.0A Glass-Passivated High-Efficiency Rectifiers • Glass-Passivated Cavity-Free Junction • High Surge Current Capability • Low Leakage Current • Super-Fast Recovery Time for High Efficiency • Low Forward Voltage, High Current Capability DO-15 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum |
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Fairchild Semiconductor |
200V P-Channel MOSFET • -5.7 A, -200 V, RDS(on) = 690 mΩ (Max.) @ VGS = -10 V, ID = -2.85 A • Low Gate Charge (Typ. 19 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested S D G G S D-PAK D Absolute Maximum Ratings TC = 25°C unless otherwise noted. + 6 6 |
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Fairchild Semiconductor |
2.0A Glass-Passivated High-Efficiency Rectifiers • Glass-Passivated Cavity-Free Junction • High Surge Current Capability • Low Leakage Current • Super-Fast Recovery Time for High Efficiency • Low Forward Voltage, High Current Capability DO-15 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum |
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Fairchild Semiconductor |
2.0A Glass-Passivated High-Efficiency Rectifiers • Glass-Passivated Cavity-Free Junction • High Surge Current Capability • Low Leakage Current • Super-Fast Recovery Time for High Efficiency • Low Forward Voltage, High Current Capability DO-15 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum |
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Fairchild Semiconductor |
2.0A Glass-Passivated High-Efficiency Rectifiers • Glass-Passivated Cavity-Free Junction • High Surge Current Capability • Low Leakage Current • Super-Fast Recovery Time for High Efficiency • Low Forward Voltage, High Current Capability DO-15 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum |
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Fairchild Semiconductor |
FYP2010DN • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection Applications • Switched mode power supply • Freewheeling diodes 1 2 3 TO-220 1. Anode 2.Cathode 3. Anode SCHOTTKY BARRIER RECTIFIE |
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Fairchild Semiconductor |
Ultrafast Rectifier • Ultrafast with soft recovery (@ IF = 1A), < 40ns • Reverse Voltage, 200V • Forward Voltage (@ TC = 100°C), < 1V TO-3P Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply 1 2 3 1. Anode |
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Fairchild Semiconductor |
2.0A Glass-Passivated High-Efficiency Rectifiers • Glass-Passivated Cavity-Free Junction • High Surge Current Capability • Low Leakage Current • Super-Fast Recovery Time for High Efficiency • Low Forward Voltage, High Current Capability DO-15 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum |
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Fairchild Semiconductor |
FQA12P20 • • • • • • -12.6A, -200V, RDS(on) = 0.47Ω @VGS = -10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability S ! ● ● G! ▶ ▲ ● G DS TO-3P FQA Series ! D Absolute Maximum Rati |
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Fairchild Semiconductor |
FFPF20UP20DN • Ultrafast with Soft Recovery : < 45ns • High Reverse Voltage : VRRM = 200V • Avalanche Energy Rated • Planar Construction Applications • Output Rectifiers • Switching Mode Power Supply • Free-wheeling diode for motor application • Power switching |
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Fairchild Semiconductor |
Ultrafast Recovery Power Rectifier |
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Fairchild Semiconductor |
2.0A Glass-Passivated High-Efficiency Rectifiers • Glass-Passivated Cavity-Free Junction • High Surge Current Capability • Low Leakage Current • Super-Fast Recovery Time for High Efficiency • Low Forward Voltage, High Current Capability DO-15 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum |
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Fairchild Semiconductor |
2.0A Glass-Passivated High-Efficiency Rectifiers • Glass-Passivated Cavity-Free Junction • High Surge Current Capability • Low Leakage Current • Super-Fast Recovery Time for High Efficiency • Low Forward Voltage, High Current Capability DO-15 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum |
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Fairchild Semiconductor |
N-Channel Power MOSFET • Low Gate Charge Requirement Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced rDS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Ju |
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Fairchild Semiconductor |
200V P-Channel MOSFET • • • • • • -12.6A, -200V, RDS(on) = 0.47Ω @VGS = -10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability S ! ● ● G! ▶ ▲ ● G DS TO-3P FQA Series ! D Absolute Maximum Rati |
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Fairchild Semiconductor |
200V P-Channel MOSFET • • • • • • -2.8A, -200V, RDS(on) = 2.7Ω @VGS = -10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability S ! G! G DS TO-220 FQP Series ! D Absolute Maximum Ratings |
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Fairchild Semiconductor |
N-Channel MOSFET • r DS(ON) = 17mΩ (Typ.), VGS = 10V, ID = 45A • Qg(tot) = 15nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82547 Applications • M |
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Fairchild Semiconductor |
Ultrafast Recovery Power Rectifier • Ultrafast with Soft Recovery : < 45ns (@IF = 20A) • High Reverse Voltage : VRRM = 200V • Avalanche Energy Rated • Planar Construction Applications • Output Rectifiers • Switching Mode Power Supply • Free-wheeling diode for motor application • Powe |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 210 m (Typ.) @ VGS = 10 V, ID = 10 A • Low Gate Charge (Typ. 50 nC) • Low Crss (Typ. 27 pF) • 100% Avalanche Aested • Improve dv/dt Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting Description UniFETTM MOSFET is Fair |
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Fairchild Semiconductor |
Ultrafast Recovery Power Rectifier • Ultrafast with Soft Recovery : < 45ns (@IF = 10A) • High Reverse Voltage : VRRM = 200V • Enhanced Avalanche Energy Rated • Planar Construction Applications • Output Rectifiers • Switching Mode Power Supply • Free-wheeling Diode • Power Switching C |
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