Fairchild Semiconductor IRL fiche technique

No.	Partie #	Fabricant	Description
1	IRLI620A	Fairchild Semiconductor	Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.609Ω (Typ.
2	IRLR230A	Fairchild Semiconductor	Advanced Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ.) IRLR/U230A BVDSS = 200 V RD
3	IRLR230	Fairchild Semiconductor	Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ.) BVDSS = 200 V RDS(on) = 0.4
4	IRLR210A	Fairchild Semiconductor	Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 1.185Ω (Typ.) BVDSS = 200 V RDS(on) = 1.5
5	IRLR120N	Fairchild Semiconductor	Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.176Ω (Typ.) BVDSS = 100 V RDS(on) = 0.2
6	IRL630S	Fairchild Semiconductor	Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ.
7	IRL540	Fairchild Semiconductor	Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.046Ω (Typ.) Absolute Maximum Ratings S
8	IRLI630A	Fairchild Semiconductor	ADVANCED POWER MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ
9	IRLI640A	Fairchild Semiconductor	Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.145Ω (Typ.
10	IRL630	Fairchild Semiconductor	Power MOSFET ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ.) Ab
11	IRL510	Fairchild Semiconductor	Power MOSFET ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.) Ab
12	IRLR220A	Fairchild Semiconductor	ADVANCED POWER MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.609Ω (Typ.) IRLR/U220A BVDSS = 200 V RD
13	IRLU220A	Fairchild Semiconductor	ADVANCED POWER MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.609Ω (Typ.) IRLR/U220A BVDSS = 200 V RD
14	IRLU230A	Fairchild Semiconductor	Advanced Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ.) IRLR/U230A BVDSS = 200 V RD
15	IRLU110A	Fairchild Semiconductor	Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.) IRLR/U110A BVDSS = 100 V RD
16	IRLI530A	Fairchild Semiconductor	HEXFET Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0. 101Ω (Ty
17	IRLR210	Fairchild Semiconductor	Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 1.185Ω (Typ.) BVDSS = 200 V RDS(on) = 1.5
18	IRLR220	Fairchild Semiconductor	Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.609Ω (Typ.) BVDSS = 200 V RDS(on) = 0.8
19	IRLU210A	Fairchild Semiconductor	Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 1.185Ω (Typ.) BVDSS = 200 V RDS(on) = 1.5
20	IRLI540A	Fairchild Semiconductor	Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.046Ω (Typ.