| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
NPT IGBT • High Speed Switching • Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A • High Input Impedance • Built-in Fast Recovery Diode Applications • UPS, Welder March 2014 General Description Using Fairchild's proprietary trench design and advanced NP |
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Fairchild Semiconductor |
NPT IGBT • High Speed Switching • Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A • High Input Impedance • Built-in Fast Recovery Diode Applications • UPS, Welder March 2014 General Description Using Fairchild's proprietary trench design and advanced NP |
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Fairchild Semiconductor |
60A/ 30V/ Avalanche Rated/ P-Channel Enhancement-Mode Power MOSFETs • 60A, 30V • rDS(ON) = 0.027Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature DRAIN (BOTTOM SIDE METAL) Description The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Ch |
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Fairchild Semiconductor |
60A/ 50V/ 0.030 Ohm/ ESD Rated/ P-Channel Power MOSFET • 60A, 50V • rDS(ON) = 0.030Ω • Temperature Compensating PSPICE® Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Component |
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Fairchild Semiconductor |
60A/ 60V/ 0.030 Ohm/ ESD Rated/ P-Channel Power MOSFET • 60A, 60V • rDS(ON) = 0.030Ω • Temperature Compensating PSPICE® Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature Symbol D Ordering Information PART NUMBER RFG60P06E PAC |
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