No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
Ultrafast IGBT • High speed switching • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 20A • High input impedance • CO-PAK, IGBT with FRD : trr = 42ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C GC E |
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Fairchild Semiconductor |
FGA40N60UFD • • • • High speed switching Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A High input impedance CO-PAK, IGBT with FRD : trr = 50ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO- |
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Fairchild Semiconductor |
N-Channel IGBT of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is idea |
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Fairchild Semiconductor |
HGTG40N60A4 of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is |
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Fairchild Semiconductor |
HGTG40N60C3 of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT i |
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Fairchild Semiconductor |
N-Channel IGBT of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is |
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Fairchild Semiconductor |
IGBT • Short Circuit Rated Time; 10us @ TC =100°C, VGE = 15V • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 400A • High Input Impedance • Fast & Soft Anti-Parallel FWD • UL Certified No.E209204 Application • AC & DC Motor Contro |
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Fairchild Semiconductor |
40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs • 40A, 100V • rDS(ON) = 0.040Ω • UIS Rating Curve • SOA is Power Dissipation Limited • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMB |
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Fairchild Semiconductor |
UFS Series N-Channel IGBT of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT i |
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Fairchild Semiconductor |
IGBT • Short Circuit Rated Time; 10us @ TC =100°C, VGE = 15V • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 400A • High Input Impedance • Fast & Soft Anti-Parallel FWD • UL Certified No.E209204 Application • AC & DC Motor Contro |
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Fairchild Semiconductor |
Molding Type Module • • • • • • UL Certified No.E209204 Short Circuit rated 10us @ TC = 100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 400A High Input Impedance Fast & Soft Anti-Parallel FWD Package Code : 7PM-EA E1/C2 Applicat |
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Fairchild Semiconductor |
Molding Type Module • • • • • • Short Circuit Rated Time; 10us @ TC =100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 400A High Input Impedance Fast & Soft Anti-Parallel FWD UL Certified No.E209204 Package Code : 7PM-IA Applicatio |
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