| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
High-Sensitivity Silicon Phototransistors lector Current 25 mA Package Outlines FPT132 PHYSICAL DIMENSIONS LENS f.---,---1 .210 (5.334) .105~! ~5~) .02l(=~ ~ ~~.160) .018(.406) DIA. .100 (2.540) BASE \ 45" COlLECTOR FPT137 .200 ~~~ 1--(5.080)1.126 (3.200) ~ ~ ~ .0223(.P5I5N9S) .4 |
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Fairchild Semiconductor |
Hermetic TO-18 Silicon Phototransistors Tc = 25°C Derate Linearly from 25°C Total Dissipation at TA = 25°C Derate Linearly from 25°C 600mW 4.8 mW/oC 300mW 2.4 mW/oC Maximum Voltages and Currents VCB Collector-to-Base Voltage FPT510/FPT510A 60 V FPT530/FPT530A 50 V FPT550 I FPT550A 30 |
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Fairchild Semiconductor |
Miniature Ceramic Silicon Phototransistors rrents VCE(sus)Coliector-to-Emitter Sustaining Voltage FPT610 30V FPT630 20V Ic Collector Current 50mA Fi.-..-h--. . . r- .09512.4131 .085 1 h-.....I .400 (1M0.1IN601 0 o * --I 1.-.020 (.5081 .016 (.4081 Note. All dimensions in inch |
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Fairchild Semiconductor |
General-Purpose NPN Silicon Phototransistor e (90% to 10%) 4-68 FPT700 *t R~ Package Outline .150 (3.810) .120±.010 . CATHODE (3.048±0.254) Pi(5.2.00800) l70 (4.318) L _.020 (.508) X ' y .550MIN .020 (.508) f.040 MIN (t016) Note. All dimensions in inches bold snd millimeters (paren |
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Fairchild Semiconductor |
Hermetic TO-18 Silicon Phototransistors Tc = 25°C Derate Linearly from 25°C Total Dissipation at TA = 25°C Derate Linearly from 25°C 600mW 4.8 mW/oC 300mW 2.4 mW/oC Maximum Voltages and Currents VCB Collector-to-Base Voltage FPT510/FPT510A 60 V FPT530/FPT530A 50 V FPT550 I FPT550A 30 |
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Fairchild Semiconductor |
General-Purpose Silicon Photodiode = 25°C Symbol Characteristic BV Breakdown Voltage Voe Open-Circuit Voltage (Note) IR Dark Current IL Photo Current (Note) lL(sc) Short-Circuit Current (Note) R (Tungsten Responsivity (Note) R@900nm Responsivity 900 nm Co Open-Circuit |
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Fairchild Semiconductor |
Miniature Ceramic Silicon Phototransistors rrents VCE(sus)Coliector-to-Emitter Sustaining Voltage FPT610 30V FPT630 20V Ic Collector Current 50mA Fi.-..-h--. . . r- .09512.4131 .085 1 h-.....I .400 (1M0.1IN601 0 o * --I 1.-.020 (.5081 .016 (.4081 Note. All dimensions in inch |
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Fairchild Semiconductor |
Very High-Sensitivity Photo-Darlingtons E Collector-to-Emitter Voltage 30V IC Collector Current 125 mA Package Outlines FPT560 .195 14.963) I----+---:~~g ~~~6~: .17814.521) olA olA .030 .06511.651) 10.762) .21 0 15.334) .03510.889) MAX .17014.318) Seating t Plan- ·--t- t .2 |
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Fairchild Semiconductor |
Very High-Sensitivity Photo-Darlingtons E Collector-to-Emitter Voltage 30V IC Collector Current 125 mA Package Outlines FPT560 .195 14.963) I----+---:~~g ~~~6~: .17814.521) olA olA .030 .06511.651) 10.762) .21 0 15.334) .03510.889) MAX .17014.318) Seating t Plan- ·--t- t .2 |
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Fairchild Semiconductor |
Hermetic TO-18 Silicon Phototransistors Tc = 25°C Derate Linearly from 25°C Total Dissipation at TA = 25°C Derate Linearly from 25°C 600mW 4.8 mW/oC 300mW 2.4 mW/oC Maximum Voltages and Currents VCB Collector-to-Base Voltage FPT510/FPT510A 60 V FPT530/FPT530A 50 V FPT550 I FPT550A 30 |
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Fairchild Semiconductor |
Hermetic TO-18 Silicon Phototransistors Tc = 25°C Derate Linearly from 25°C Total Dissipation at TA = 25°C Derate Linearly from 25°C 600mW 4.8 mW/oC 300mW 2.4 mW/oC Maximum Voltages and Currents VCB Collector-to-Base Voltage FPT510/FPT510A 60 V FPT530/FPT530A 50 V FPT550 I FPT550A 30 |
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Fairchild Semiconductor |
Hermetic TO-18 Silicon Phototransistors Tc = 25°C Derate Linearly from 25°C Total Dissipation at TA = 25°C Derate Linearly from 25°C 600mW 4.8 mW/oC 300mW 2.4 mW/oC Maximum Voltages and Currents VCB Collector-to-Base Voltage FPT510/FPT510A 60 V FPT530/FPT530A 50 V FPT550 I FPT550A 30 |
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Fairchild Semiconductor |
Very High-Sensitivity Photo Darlingtons Currents Vce Collector-to-Base Voltage 30 V VCE Collector-to-Emitter Voltage 30 V Ic Collector Current 50 mA Package Outlines FPl"400 PHYSICAL DIMENSIONS 5~h DlA LENS C~j ! - t .105 (2.667) .210 (5.334) .140 (3.556) REF~ ~ ~ .400(10.160) |
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Fairchild Semiconductor |
Very High-Sensitivity Photo Darlingtons Currents Vce Collector-to-Base Voltage 30 V VCE Collector-to-Emitter Voltage 30 V Ic Collector Current 50 mA Package Outlines FPl"400 PHYSICAL DIMENSIONS 5~h DlA LENS C~j ! - t .105 (2.667) .210 (5.334) .140 (3.556) REF~ ~ ~ .400(10.160) |
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Fairchild Semiconductor |
High-Sensitivity Silicon Phototransistors lector Current 25 mA Package Outlines FPT132 PHYSICAL DIMENSIONS LENS f.---,---1 .210 (5.334) .105~! ~5~) .02l(=~ ~ ~~.160) .018(.406) DIA. .100 (2.540) BASE \ 45" COlLECTOR FPT137 .200 ~~~ 1--(5.080)1.126 (3.200) ~ ~ ~ .0223(.P5I5N9S) .4 |
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Fairchild Semiconductor |
General-Purpose Silicon Phototransistors ent (Note 4) VCB Collector-to-Base Voltage 20 V VCE(sus) Collector-to-Emitter Sustaining Voltage (Note 4) 15 V Ic Collector Current 25 mA Package Outlines FPT131 PHYSICAL DIMENSIONS (5~~h LENS h - - - I .210 (5.334) .1051;-:, -+,140(3,5 |
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Fairchild Semiconductor |
General-Purpose Silicon Phototransistors ent (Note 4) VCB Collector-to-Base Voltage 20 V VCE(sus) Collector-to-Emitter Sustaining Voltage (Note 4) 15 V Ic Collector Current 25 mA Package Outlines FPT131 PHYSICAL DIMENSIONS (5~~h LENS h - - - I .210 (5.334) .1051;-:, -+,140(3,5 |
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Fairchild Semiconductor |
Hermetic Coaxial Silicon Photodiode .216) .153 (3.886) .147 (3.734) CATHODE O~.450 (11.43) ) I .021 (.533) -+I 1-.015 (.381) DIA Not. . All dimen8ion In inches bold and millimeter. (parentheses) Tolerance unles. specified = ±O.IS (0.381) Typical Electrical Characteristics 4-45 FP |
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Fairchild Semiconductor |
Hermetic Coaxial Silicon Phototransistor um Voltage. and Current. (Note 1) VCE(sus) Collector-to-Emitter Sustaining Voltage 30 V VEC(sus) Emitter-to-Collector Sustaining Voltage 5V Ic Collector Current 25 mA Package Outline WINDOW PHOTOSENSITIVE AREA .084 (2.134) .078 (1.981) 1 |
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Fairchild Semiconductor |
General Purpose Silicon Planar Phototransistor |
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