| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
FKPF5N80 0 5 0.5 10 2 - 40 ~ 125 - 40 ~ 125 Units A A A A2s A/µs W W V A °C °C V Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms IG = 2x IGT, tr ≤ 100ns Ta=25°C, AC 1 minute, T1 T2 G terminal to case 1500 Thermal Characteristi |
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Fairchild Semiconductor |
Application Explanation 125 - 40 ~ 125 Units A A A A2s A/µs W W V A °C °C V Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms IG = 2x IGT, tr ≤ 100ns Ta=25°C, AC 1 minute, T1 T2 G terminal to case 1500 Thermal Characteristic Symbol Rth(J-C) Pa |
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Fairchild Semiconductor |
Application Explanation 125 - 40 ~ 125 Units A A A A2s A/µs W W V A °C °C V Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms IG = 2x IGT, tr ≤ 100ns Ta=25°C, AC 1 minute, T1 T2 G terminal to case 1500 Thermal Characteristic Symbol Rth(J-C) Pa |
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Fairchild Semiconductor |
Application Explanation(Switching mode power supply/ light dimmer/ electric flasher unit/ hair drier) 5 - 40 ~ 125 Units A A A A2s A/µs W W V A °C °C V Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms IG = 2x IGT, tr ≤ 100ns Ta=25°C, AC 1 minute, T1 T2 G terminal to case 1500 Thermal Characteristic Symbol Rth(J-A) Para |
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Fairchild Semiconductor |
Switching mode power supply/ light dimmer/ electric flasher unit/ hair drier 40 ~ 125 Units A A A A2s A/µs W W V A °C °C V Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms IG = 2x IGT, tr ≤ 100ns Ta=25°C, AC 1 minute, T1 T2 G terminal to case 1500 Thermal Characteristic Symbol Rth(J-C) Paramet |
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Fairchild Semiconductor |
Bi-Directional Triode Thyristor Planar Silicon value, non-repetitive Value corresponding to 1 cycle of halfwave 60Hz, surge on-state current IG = 2x IGT, tr ≤ 100ns TC = +80°C, Pulse Width = 1.0µs TC = +80°C, t = 8.3ms Pulse Width ≤ 1.0µsec; TC = 90°C Rating 12 120 60 50 5 0.5 10 2 - 40 ~ 125 - |
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Fairchild Semiconductor |
Bi-Directional Triode Thyristor Planar Silicon 5 0.5 10 2 - 40 ~ 125 - 40 ~ 125 Units A A A A2s A/µs W W V A °C °C V Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms IG = 2x IGT, tr ≤ 100ns Ta=25°C, AC 1 minute, T1 T2 G terminal to case 1500 Thermal Characteristic |
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Fairchild Semiconductor |
Bi-Directional Triode Thyristor Planar Silicon 0 5 0.5 10 2 - 40 ~ 125 - 40 ~ 125 Units A A A A2s A/µs W W V A °C °C V Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms IG = 2x IGT, tr ≤ 100ns Ta=25°C, AC 1 minute, T1 T2 G terminal to case 1500 Thermal Characteristi |
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