| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Fairchild Semiconductor |
FJP13009 • High-Voltage Capability • High Switching Speed Applications • Electronic Ballast • Switching Regulator • Motor Control • Switched Mode Power Supply Description The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is |
|
|
|
|
Fairchild Semiconductor |
FJPF9020 tter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition IC = - 100uA, IE = 0 IC = - 500uA, IB = 0 IE = - 200mA, IC = 0 VCE = - 550V, IE = 0 VEB = - 6V, IC = 0 VCE = - 4V, IC = - 1A IC = |
|
|
|
|
Fairchild Semiconductor |
NPN Silicon Transistor rent Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC |
|
|
|
|
Fairchild Semiconductor |
High Voltage Fast-Switching NPN Power Transistor lector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage fT Cob tON tSTG tF Current Gain Bandwidth Product Output Capacitance Turn On Time Storge Time Fall Time * Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2% Conditions IC = 10mA, I |
|
|
|
|
Fairchild Semiconductor |
NPN Silicon Transistor • High-Voltage Capability • High Switching Speed Applications • Electronic Ballast • Switching Regulator • Motor Control • Switched Mode Power Supply Description The FJPF13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJPF13009 i |
|
|
|
|
Fairchild Semiconductor |
NPN Silicon Transistor r Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.2A VCE = 5V, IC = 1A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCB = 10V, IE = 0, f = 1MH |
|
|
|
|
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 50watts. High Fequency : 30MHz. High Voltage : VCEO= -230V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to FJPF5200 Full thermal and |
|
|
|
|
Fairchild Semiconductor |
NPN Silicon Transistor (FDC655 MOSFET) VCS(ON) 0.131 V IC 0.5 A Equiv RCS(ON) 0.261 Ω ∗ • Low Equivalent On Resistance • Very Fast Switch : 150KHz • Squared RBSOA : Up to 1600Volts • Avalanche Rated • Low Driving Capacitance, no Miller Capacitance (Typ 12pF Cap @ 200vo |
|
|
|
|
Fairchild Semiconductor |
NPN Power Transistor (FDC655 MOSFET) VCS(ON) 0.21 V IC Equiv. RCS(ON)(1) 2 A 0.105 Ω • Low Equivalent On Resistance • Very Fast Switch: 150 kHz • Wide RBSOA: Up to 1100 V • Avalanche Rated • Low Driving Capacitance, no Miller Capacitance • Low Switching Losses • Relia |
|
|
|
|
Fairchild Semiconductor |
High Voltage Fast-Switching NPN Power Transistor • High Voltage High Speed Power Switch Application • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 TO-220 1.Base 2.Collector 3.Emitter Ordering Information Part Number FJP13007TU |
|
|
|
|
Fairchild Semiconductor |
High Voltage Fast-Switching NPN Power Transistor MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STAND |
|
|
|
|
Fairchild Semiconductor |
NPN Silicon Transistor t) VBE(sat) fT Cob tON tSTG tF Collector-Base Breakdwon Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain * Collector-Emitter Saturation Voltage Base-Emitter |
|
|
|
|
Fairchild Semiconductor |
Power Amplifier CE=5V, IC=1A VCB=10V, f=1MHz VCC=20V, IC=1A=10IB1=-10IB2 RL=20Ω Min. 200 120 8 Typ. Max. Units V V V 0.1 0.1 120 250 0.5 1.2 30 210 0.26 0.68 6.68 mA mA V V MHz pF µs µs µs Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Vol |
|
|
|
|
Fairchild Semiconductor |
NPN Triple Diffused Planar Silicon Transistor in Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=300mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=4A IC=4A, IB=1A IC=4A, IB |
|
|
|
|
Fairchild Semiconductor |
PNP Epitaxial Darlington Transistor DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition IC = - 100uA, IE = 0 IC = - 500uA, IB = 0 IE = - 200mA, IC = 0 VCE = - 550V, IE = 0 VEB = - 6V, IC = 0 VCE = - 4V, IC = - 1A IC = - 1A, IB = - 20mA IC |
|
|
|
|
Fairchild Semiconductor |
Power Amplifier 5V, IC=1A VCB=10V, f=1MHz VCC=20V, IC=1A=10IB1=-10IB2 RL=20Ω Min. 200 120 8 Typ. Max. Units V V V 0.1 0.1 120 250 0.5 1.2 30 210 0.26 0.68 6.68 mA mA V V MHz pF µs µs µs Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltag |
|
|
|
|
Fairchild Semiconductor |
NPN Silicon Transistor • Fast Speed Switching • Wide Safe Operating Area • High Voltage Capability Application • Electronic Ballast • Switch Mode Power Supplies 1 TO-220 1.Base 2.Collector 3.Emitter 1 B C2 E3 Ordering Information Part Number FJP5555TU Marking J5555 |
|
|
|
|
Fairchild Semiconductor |
High Voltage Switch Mode Application 45mA, IB2=0.5A RL=250Ω VCC=250V, IC=2.5A IB1=0.5A, IB2=1.0A RL=100Ω Min. 1050 400 14 10 20 Typ. Max. Units V V V Current Gain 40 0.5 1.5 1.2 45 1.0 1.2 0.3 2.0 2.5 0.3 V V V pF µs µs µs µs µs µs Collector-Emitter Saturation Voltage Base-Emitte |
|
|
|
|
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 50watts. High Fequency : 30MHz. High Voltage : VCEO= -230V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to FJPF5200 Full thermal and |
|
|
|
|
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 50watts. High Fequency : 30MHz. High Voltage : VCEO= -230V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to FJPF5200 Full thermal and |
|