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Fairchild Semiconductor FGB DataSheet

No. Partie # Fabricant Description Fiche Technique
1
FGB3040CS

Fairchild Semiconductor
N-Channel Ignition IGBT
„ SCIS Energy = 300mJ at TJ = 25oC „ Logic Level Gate Drive „ Qualified to AEC Q101 „ RoHS Compliant Package Symbol Device Maximum Ratings TA = 25°C unless otherwi
Datasheet
2
FGB3040G2_F085

Fairchild Semiconductor
N-Channel Ignition IGBT
„ SCIS Energy = 300mJ at TJ = 25oC „ Logic Level Gate Drive Applications „ Automotive lgnition Coil Driver Circuits „ Coil On Plug Applications „ Qualified to AEC Q101 „ RoHS Compliant Package JEDEC TO-263AB D²-Pak JEDEC TO-220AB E CG Symbol G
Datasheet
3
FGB3245G2_F085

Fairchild Semiconductor
N-Channel Ignition IGBT
„ SCIS Energy = 320mJ at TJ = 25oC „ Logic Level Gate Drive „ Low Saturation Voltage „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Automotive lgnition Coil Driver Circuits „ Coil On Plug Applications General Description The FGB3245G2_F085
Datasheet
4
FGBS3040E1_F085

Fairchild Semiconductor
Integrated Smart Ignition Coil Driver

 400V 300mJ N Channel Ignition IGBT
 Control Input buffering
 Input spike filter of typical 13us
 Operation from Ignition or Battery line
 Ground shift tolerance +/- 1.5V
 Programmable maximum dwell time
 Current programmable bidirectional Inp
Datasheet
5
FGB20N60SFD

Fairchild Semiconductor
IGBT

• High Current Capability
• Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20 A
• High Input Impedance
• Fast Switching : EOFF = 8 uJ/A
• RoHS Compliant Applications
• Solar Inverter, UPS, Welder, PFC General Description Using novel field stop IGBT
Datasheet
6
FGB20N6S2

Fairchild Semiconductor
600V/ SMPS II Series N-Channel IGBT

• 100kHz Operation at 390V, 7A
• 200kHZ Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . 85ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 30nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . .
Datasheet
7
FGB30N6S2

Fairchild Semiconductor
600V/ SMPS II Series N-Channel IGBT

• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 23nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . .
Datasheet
8
FGB30N6S2D

Fairchild Semiconductor
600V/ SMPS II Series N-Channel IGBT

• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 23nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . .
Datasheet
9
FGB20N60SFD_F085

Fairchild Semiconductor
20A Field Stop IGBT

• High current capability
• Low saturation voltage: VCE(sat) = 2.2V @ IC = 20A
• High input impedance
• Fast switching
• Qualified to Automotive Requirements of AEC-Q101
• RoHS complaint Applications
• Inverters, SMPS, PFC, UPS
• Automotive Chargers,
Datasheet
10
FGB7N60UNDF

Fairchild Semiconductor
IGBT

• Short Circuit Rated 10 us
• High Current Capability
• High Input Impedance
• Fast Switching
• RoHS Compliant Applications
• Sewing Machine, CNC, Home Appliances, Motor Control General Description Using advanced NPT IGBT technology, Fairchild’s the
Datasheet
11
FGB5N60UNDF

Fairchild Semiconductor
IGBT

• Short Circuit Rated 10 us
• High Current Capability
• High Input Impedance
• Fast Switching
• RoHS Compliant Applications
• Sewing Machine, CNC, Home Appliances, Motor Control September 2013 General Description Using advanced NPT IGBT technology,
Datasheet
12
FGB3236_F085

Fairchild Semiconductor
N-Channel Ignition IGBT
„ Industry Standard D2-Pak package „ SCIS Energy = 320mJ at TJ = 25oC „ Logic Level Gate Drive „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Automotive lgnition Coil Driver Circuits „ Coil On Plug Applications Package GATE EMITTER COLL
Datasheet
13
FGB20N6S2D

Fairchild Semiconductor
600V/ SMPS II Series N-Channel IGBT

• 100kHz Operation at 390V, 7A
• 200kHZ Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 30nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . .
Datasheet
14
FGB40N6S2

Fairchild Semiconductor
600V/ SMPS II Series N-Channel IGBT

• 100kHz Operation at 390V, 24A
• 200kHZ Operation at 390V, 18A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 35nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . .
Datasheet
15
FGB20N60SF

Fairchild Semiconductor
20A Field Stop IGBT

• High Current Capability
• Low Saturation Voltage: VCE(sat) =2.2 V @ IC = 20 A
• High Input Impedance
• Fast Switching : EOFF = 8 uJ/A
• RoHS Compliant Applications
• Solar Inverter, UPS, Welder, PFC November 2013 General Description Using novel fi
Datasheet
16
FGB40N60SM

Fairchild Semiconductor
Field Stop IGBT

• Maximum Junction Temperature : TJ =175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
• High Input Impedance
• Fast Switching
• Tighten Paramet
Datasheet
17
FGB3440G2_F085

Fairchild Semiconductor
N-Channel Ignition IGBT
„ SCIS Energy = 335mJ at TJ = 25oC „ Logic Level Gate Drive Applications „ Automotive lgnition Coil Driver Circuits „ Coil On Plug Applications „ Qualified to AEC Q101 „ RoHS Compliant Package JEDEC TO-263AB D²-Pak JEDEC TO-220AB EC G Symbol G
Datasheet



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