| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
N-Channel MOSFET • 700 V @ TJ = 150°C • Typ. RDS(on) = 168 mΩ • Ultra Low Gate Charge (Typ. Qg = 60 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV • Solar Inverter • AC - DC |
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Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 220 mΩ • Ultra Low Gate Charge (Typ. Qg = 48 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 129 pF) • 100% Avalanche Tested • An Integrated Gate Resistor • RoHS Compliant Applications • LCD / LED / PDP |
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Fairchild Semiconductor |
N-Channel MOSFET • BVDSS > 650 V @ TJ = 150oC • RDS(on) = 140 mΩ (Typ.) @ VGS = 10 V, ID = 11 A • Ultra Low Gate Charge (Typ. Qg = 45 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 196.4 pF) • 100% Avalanche Tested • RoHS Compliant Application • LCD/LED/PD |
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Fairchild Semiconductor |
N-Channel MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 170 mΩ • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 160 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV Lighting • Solar Inverter |
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Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 160 mΩ • Ultra Low Gate Charge (Typ. Qg = 63 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 178 pF) • 100% Avalanche Tested • An Integrated Gate Resistor • RoHS Compliant Applications • LCD / LED / PDP |
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Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 96 mΩ • Ultra Low Gate Charge (Typ. Qg = 63 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 280 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Po |
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Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 112 mΩ • Ultra Low Gate Charge (Typ. Qg = 54 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial P |
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Fairchild Semiconductor |
N-Channel MOSFET • 650V @ TJ = 150°C • Typ. RDS(on) = 150 mΩ • Ultra Low Gate Charge (Typ. Qg = 75 nC ) • Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) • 100% Avalanche Tested Applications • Solar Inverter • AC-DC Power Supply Description SuperFET® MO |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 1.8 Ω (Typ.) • Ultra Low Gate Charge (Typ. Qg = 11 nC) • Low Eoss (Typ. 1.1 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 51 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability Applications Descripti |
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Fairchild Semiconductor |
MOSFET • Typ. RDS(on) = 710 mΩ (Typ.) • Ultra Low Gate Charge (Typ. Qg = 22 nC) • Low Eoss (Typ. 2.3 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability Applications De |
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Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 350 mΩ • Ultra Low Gate Charge (Typ. Qg = 28 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 90 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV Lighting • Solar Inverter • |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A • Ultra Low Gate Charge ( Typ.Qg = 30.4nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant TM SupreMOS August 2009 Description The SupreMOS MOSFET, Fairchild’s next gene |
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Fairchild Semiconductor |
SuperFET • • • • • • 650V @ Tj = 150°C Typ. Rds(on) = 0.32Ω Ultra low gate charge (typ. Qg=40nC) Low effective output capacitance (typ. Coss.eff = 95pF) 100% avalanche tested RoHS Compliant D { ● ◀ G D S TO-220AB FCP Series G{ GD S ▲ ● ● TO-220F FCPF |
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Fairchild Semiconductor |
N-Channel MOSFET • 650 V @TJ = 150°C • Typ. RDS(on) = 102 mΩ • Ultra Low Gate Charge (Typ. Qg = 75 nC) • Low Effective Output Capacitance (Typ. Coss(eff) = 258 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Pow |
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Fairchild Semiconductor |
N-Channel MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 170 mΩ • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 160 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV Lighting • Solar Inverter |
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Fairchild Semiconductor |
N-Channel MOSFET • 700 V @ TJ = 150 oC • Typ. RDS(on) = 59 m • Ultra Low Gate Charge (Typ. Qg = 78 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF) • 100% Avalanche Tested • RoHS Compliant Description SuperFET® III MOSFET is Fairchild Semiconductor |
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Fairchild Semiconductor |
N-Channel MOSFET • Typ. RDS(on) = 0.245 • Ultra Low Gate Charge (Typ. Qg = 58 nC) • Low Eoss (Typ. 5.6 uJ @ 400 V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF) • 100% Avalanche Tested • RoHS Compliant Applications • AC-DC Power Supply • LED Lightin |
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Fairchild Semiconductor |
N-Channel MOSFET • 700 V @TJ = 150°C • RDS(on) = 168 mΩ (Typ.) • Ultra Low Gate Charge (Typ. Qg = 60 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV • Telecom / Server Power |
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Fairchild Semiconductor |
MOSFET • 700 V @ TJ = 150°C • Typ. RDS(on) = 133 mΩ • Ultra Low Gate Charge (Typ. Qg = 72 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 361 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV • Telecom / Server Power |
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Fairchild Semiconductor |
MOSFET • 700 V @ TJ = 150°C • Typ. RDS(on) = 96 mΩ (Typ.) • Ultra Low Gate Charge (Typ. Qg = 98 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV • Telecom / Server |
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