| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
Central Processing Unit (CPU) |
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Fairchild Semiconductor |
Momory Interface |
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Fairchild Semiconductor |
Single-Chip Microcomputer |
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Fairchild Semiconductor |
Peripheral Input / Output |
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Fairchild Semiconductor |
Program Storage Unit |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 29.1 mΩ (Typ.) @ VGS = 10 V, ID = 5.9 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSF |
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Fairchild Semiconductor |
N-Channel MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 320 mΩ • Ultra Low Gate Charge (Typ. Qg = 34 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 97 pF) • 100% Avalanche Tested • An Integrated Gate Resistor • RoHS Compliant Applications • LCD / LED / PDP |
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Fairchild Semiconductor |
Power Amplifier CE=5V, IC=1A VCB=10V, f=1MHz VCC=20V, IC=1A=10IB1=-10IB2 RL=20Ω Min. 200 120 8 Typ. Max. Units V V V 0.1 0.1 120 250 0.5 1.2 30 210 0.26 0.68 6.68 mA mA V V MHz pF µs µs µs Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Vol |
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Fairchild Semiconductor |
N-Channel MOSFET • 650 V @TJ = 150°C • Max. RDS(on) = 380 mΩ • Ultra low gate charge (typ. Qg = 30 nC) • Low effective output capacitance (typ. Coss.eff = 95 pF) • 100% avalanche tested Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of |
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Fairchild Semiconductor |
N-Channel MOSFET • 700 V @TJ = 150°C • RDS(on) = 320 mΩ (Typ.) • Ultra Low Gate Charge (Typ. Qg = 33 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV • Telecom / Server Power |
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