Fairchild Semiconductor BC5 fiche technique

No.	Partie #	Fabricant	Description
1	BC547A	Fairchild Semiconductor	NPN Transistor A = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max BC547 / A / B / C 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchil
2	BC548	Fairchild Semiconductor	NPN Amplifier • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 1 TO-92 1. Collector 2. Base 3. Emitter Ordering Information Part Number BC546ABU BC546ATA BC546BTA BC546BT
3	BC547C	Fairchild Semiconductor	NPN Transistor A = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max BC547 / A / B / C 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchil
4	BC547	Fairchild Semiconductor	NPN Transistor • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 1 TO-92 1. Collector 2. Base 3. Emitter Ordering Information Part Number BC546ABU BC546ATA BC546BTA BC546BT
5	BC559	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor • Switching and Amplifier • High-Voltage: BC556, VCEO = -65 V • Low-Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550 123 Straight Lead Bulk Packing TO-92 1. Collector 12 3 2. Base 3. Emitter Bent Lead Tape & Reel Ammo P
6	BC557	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor • Switching and Amplifier • High-Voltage: BC556, VCEO = -65 V • Low-Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550 123 Straight Lead Bulk Packing TO-92 1. Collector 12 3 2. Base 3. Emitter Bent Lead Tape & Reel Ammo P
7	BC560	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor • Switching and Amplifier • High-Voltage: BC556, VCEO = -65 V • Low-Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550 123 Straight Lead Bulk Packing TO-92 1. Collector 12 3 2. Base 3. Emitter Bent Lead Tape & Reel Ammo P
8	BC517	Fairchild Semiconductor	NPN Darlington Transistor at) VBE(on) Ta = 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Conditions IC = 2.0mA, IB = 0 IC = 10µA, IE = 0 IE = 100nA, IC =
9	BC546	Fairchild Semiconductor	NPN Transistor • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 1 TO-92 1. Collector 2. Base 3. Emitter Ordering Information Part Number BC546ABU BC546ATA BC546BTA BC546BT
10	BC548A	Fairchild Semiconductor	NPN Transistor A = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max BC548 / A / B / C 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchil
11	BC550	Fairchild Semiconductor	NPN EPITAXIAL SILICON TRANSISTOR • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 1 TO-92 1. Collector 2. Base 3. Emitter Ordering Information Part Number BC546ABU BC546ATA BC546BTA BC546BT
12	BC516	Fairchild Semiconductor	PNP Darlington Transistor Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product (2) IC = 100mA, IB = 0.1mA IC = 10mA, VCE = 5V IC = 10mA, VCE = 5V, f = 100MHz 1V 1.4 V 200 MHZ NOTES: 1. Pulse Test Pulse Width ≤ 2% 2. fT = IhfeI · ftest Thermal
13	BC547B	Fairchild Semiconductor	NPN Amplifier A = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max BC547 / A / B / C 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchil
14	BC548B	Fairchild Semiconductor	NPN Transistor A = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max BC548 / A / B / C 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchil
15	BC548C	Fairchild Semiconductor	NPN Amplifier A = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max BC548 / A / B / C 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchil
16	BC549	Fairchild Semiconductor	NPN EPITAXIAL SILICON TRANSISTOR • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 1 TO-92 1. Collector 2. Base 3. Emitter Ordering Information Part Number BC546ABU BC546ATA BC546BTA BC546BT
17	BC558	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor • Switching and Amplifier • High-Voltage: BC556, VCEO = -65 V • Low-Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550 123 Straight Lead Bulk Packing TO-92 1. Collector 12 3 2. Base 3. Emitter Bent Lead Tape & Reel Ammo P
18	BC556	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor • Switching and Amplifier • High-Voltage: BC556, VCEO = -65 V • Low-Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550 123 Straight Lead Bulk Packing TO-92 1. Collector 12 3 2. Base 3. Emitter Bent Lead Tape & Reel Ammo P