| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
PNP EPITAXIAL SILICON TRANSISTOR |
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Fairchild Semiconductor |
PNP EPITAXIAL SILICON TRANSISTOR IC= -10mA, IB=0 Min. -45 -25 IC= -0.1mA, VBE=0 -50 -30 IE= -10µA, IC=0 VCE= -45V, VBE=0 VCE= -25V, VBE=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -300mA IC= -500mA, IB= -50mA VCE= -1V, IC= -300mA VCE= -5V, IC= -10mA, f=20MHz VCB= -10V, IE=0, f=1MHz 100 12 |
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Fairchild Semiconductor |
PNP EPITAXIAL SILICON TRANSISTOR • Switching and Amplifier Applications • Suitable for AF-Driver Stages and Low-Power Output Stages • Complement to BC337 / BC338 1 TO-92 1. Collector 2. Base 3. Emitter Ordering Information Part Number BC327BU BC32716BU BC32716TA BC32725BU BC32725T |
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Fairchild Semiconductor |
PNP EPITAXIAL SILICON TRANSISTOR IC= -10mA, IB=0 Min. -45 -25 IC= -0.1mA, VBE=0 -50 -30 IE= -10µA, IC=0 VCE= -45V, VBE=0 VCE= -25V, VBE=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -300mA IC= -500mA, IB= -50mA VCE= -1V, IC= -300mA VCE= -5V, IC= -10mA, f=20MHz VCB= -10V, IE=0, f=1MHz 100 12 |
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Fairchild Semiconductor |
NPN General Purpose Amplifier Total Device Dissipation Derate above 25°C RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max BC337-16 / BC337-25 625 5.0 83.3 200 Units V V V A °C Units mW mW /°C °C/W °C/W © 1997 Fairchild Semiconductor Co |
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Fairchild Semiconductor |
NPN General Purpose Amplifier Total Device Dissipation Derate above 25°C RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max BC337-16 / BC337-25 625 5.0 83.3 200 Units V V V A °C Units mW mW /°C °C/W °C/W © 1997 Fairchild Semiconductor Co |
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Fairchild Semiconductor |
NPN General Purpose Amplifier 25°C RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max BC337-16 / BC337-25 625 5.0 83.3 200 Units V V V A °C Units mW mW /°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 33716-25, Rev B BC337-16 / |
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Fairchild Semiconductor |
NPN General Purpose Amplifier 25°C RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max BC337-16 / BC337-25 625 5.0 83.3 200 Units V V V A °C Units mW mW /°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 33716-25, Rev B BC337-16 / |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor • Switching and Amplifier Applications • Suitable for AF-Driver Stages and Low-Power Output Stages • Complement to BC327 / BC328 Ordering Information 123 Straight Lead Bulk Packing TO-92 1. Collector 12 3 2. Base 3. Emitter Bent Lead Tape & Ree |
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Fairchild Semiconductor |
PNP EPITAXIAL SILICON TRANSISTOR IC= -10mA, IB=0 Min. -45 -25 IC= -0.1mA, VBE=0 -50 -30 IE= -10µA, IC=0 VCE= -45V, VBE=0 VCE= -25V, VBE=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -300mA IC= -500mA, IB= -50mA VCE= -1V, IC= -300mA VCE= -5V, IC= -10mA, f=20MHz VCB= -10V, IE=0, f=1MHz 100 12 |
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Fairchild Semiconductor |
PNP EPITAXIAL SILICON TRANSISTOR |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor • Switching and Amplifier Applications • Suitable for AF-Driver Stages and Low-Power Output Stages • Complement to BC327 / BC328 Ordering Information 123 Straight Lead Bulk Packing TO-92 1. Collector 12 3 2. Base 3. Emitter Bent Lead Tape & Ree |
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Fairchild Semiconductor |
PNP EPITAXIAL SILICON TRANSISTOR IC= -10mA, IB=0 Min. -45 -25 IC= -0.1mA, VBE=0 -50 -30 IE= -10µA, IC=0 VCE= -45V, VBE=0 VCE= -25V, VBE=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -300mA IC= -500mA, IB= -50mA VCE= -1V, IC= -300mA VCE= -5V, IC= -10mA, f=20MHz VCB= -10V, IE=0, f=1MHz 100 12 |
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Fairchild Semiconductor |
NPN General Purpose Amplifier |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor • Switching and Amplifier Applications • Suitable for AF-Driver Stages and Low-Power Output Stages • Complement to BC327 / BC328 Ordering Information 123 Straight Lead Bulk Packing TO-92 1. Collector 12 3 2. Base 3. Emitter Bent Lead Tape & Ree |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor • Switching and Amplifier Applications • Suitable for AF-Driver Stages and Low-Power Output Stages • Complement to BC327 / BC328 Ordering Information 123 Straight Lead Bulk Packing TO-92 1. Collector 12 3 2. Base 3. Emitter Bent Lead Tape & Ree |
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Fairchild Semiconductor |
PNP Amplifier s otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max BC369 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor • Switching and Amplifier Applications • Suitable for AF-Driver Stages and Low-Power Output Stages • Complement to BC327 / BC328 Ordering Information 123 Straight Lead Bulk Packing TO-92 1. Collector 12 3 2. Base 3. Emitter Bent Lead Tape & Ree |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor • Switching and Amplifier Applications • Suitable for AF-Driver Stages and Low-Power Output Stages • Complement to BC327 / BC328 Ordering Information 123 Straight Lead Bulk Packing TO-92 1. Collector 12 3 2. Base 3. Emitter Bent Lead Tape & Ree |
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