| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
Small Signal Diode cs TA=25°C unless otherwise noted Symbol VR VF IR CT trr Parameter Breakdown Voltage Forward Voltage BAV70 BAV74 BAV70 Reverse Leakage BAV74 BAV70 Total Capacitance Reverse Recovery Time BAV74 BAV70 BAV74 BAV70 BAV74 Test Conditions IR = 100µ |
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Fairchild Semiconductor |
High Voltage / General Purpose Diode nt DC Forward Current Recurrent Peak Forward Current Non-repetitive Peak Forward Current Pulse Width = 1.0 s Pulse Width = 1.0 μs 200 V 200 mA 500 mA 600 mA 1.0 A 4.0 A TSTG TJ Storage Temperature Range Operating Junction Temperature -65 to +200 |
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Fairchild Semiconductor |
General Purpose Diodes pation Derate above 25°C Thermal Resistance, Junction to Ambient Max BAV19 / 20 / 21 500 3.33 300 Units mW mW/°C °C/W 2000 Fairchild Semiconductor International BAV19/20/21, Rev. A BAV19 / BAV20 / BAV21 High Voltage General Purpose Diode (cont |
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Fairchild Semiconductor |
General Purpose Diodes pation Derate above 25°C Thermal Resistance, Junction to Ambient Max BAV19 / 20 / 21 500 3.33 300 Units mW mW/°C °C/W 2000 Fairchild Semiconductor International BAV19/20/21, Rev. A BAV19 / BAV20 / BAV21 High Voltage General Purpose Diode (cont |
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Fairchild Semiconductor |
High Voltage / General Purpose Diode nt DC Forward Current Recurrent Peak Forward Current Non-repetitive Peak Forward Current Pulse Width = 1.0 s Pulse Width = 1.0 μs 150 V 200 mA 500 mA 600 mA 1.0 A 4.0 A TSTG TJ Storage Temperature Range Operating Junction Temperature -65 to +200 |
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Fairchild Semiconductor |
General Purpose Diodes pation Derate above 25°C Thermal Resistance, Junction to Ambient Max BAV19 / 20 / 21 500 3.33 300 Units mW mW/°C °C/W 2000 Fairchild Semiconductor International BAV19/20/21, Rev. A BAV19 / BAV20 / BAV21 High Voltage General Purpose Diode (cont |
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Fairchild Semiconductor |
200 mA 70 V High Conductance Ultra-Fast Switching Diode • High Conductance: IF = 200 mA • Fast Switching Speed: trr < 6 ns Maximum • Small Plastic SOT-23 Package • Series-Pair Configuration Applications • High-Speed Switching Applications 3 1 SOT-23 2 Description The BAV99 is a 350 mW high-speed switc |
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Fairchild Semiconductor |
General Purpose Diodes |
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Fairchild Semiconductor |
General Purpose Diodes |
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Fairchild Semiconductor |
HIGH VOLTAGE GENERAL PURPOSE DIODE ON DIAGRAMS 3 2 ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated) SYM BV IR CHARACTERISTICS Breakdown Voltage Reverse Current (single device) Reverse Current (series connection) MIN 250 MAX UNITS V TEST CON |
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Fairchild Semiconductor |
Small Signal Diode cs TA=25°C unless otherwise noted Symbol VR VF IR CT trr Parameter Breakdown Voltage Forward Voltage BAV70 BAV74 BAV70 Reverse Leakage BAV74 BAV70 Total Capacitance Reverse Recovery Time BAV74 BAV70 BAV74 BAV70 BAV74 Test Conditions IR = 100µ |
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Fairchild Semiconductor |
Small Signal Diode Leakage VR = 70V VR = 25V, TA = 150°C VR = 70V, TA = 150°C VR = 0V, f = 1.0MHz IF = IR = 10mA, IRR = 1.0mA, RL = 100Ω CT trr Total Capacitance Reverse Recovery Time ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com BAV99WT1G Re |
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Fairchild Semiconductor |
Fast Switching Diode • Fast Switching Diodes with Trr < 4.0 nsec • Surface Mount Device at 0.95 mm Maximum Height • MSL 1 per J-STD-020 • Pb Free and RoHS Compliant • Matte Sn Lead Finish • Green Mold Compound 3 3 3 SOT-523 12 BAW56T 12 BAV70T 12 BAV99T Ordering I |
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Fairchild Semiconductor |
Fast Switching Diode • Fast Switching Diodes with Trr < 4.0 nsec • Surface Mount Device at 0.95 mm Maximum Height • MSL 1 per J-STD-020 • Pb Free and RoHS Compliant • Matte Sn Lead Finish • Green Mold Compound 3 3 3 SOT-523 12 BAW56T 12 BAV70T 12 BAV99T Ordering I |
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