| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
NPN Silicon Transistor itance fT Current Gain Bandwidth Product tON Turn On Time tSTG Storage Time tF Fall Time * Pulse test: PW≤300µs, Duty cycle≤2% VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, I |
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Fairchild Semiconductor |
High Voltage Fast-Switching NPN Power Transistor • High Voltage High Speed Power Switch Application • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 TO-220 1.Base 2.Collector 3.Emitter Ordering Information Part Number FJP13007TU |
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Fairchild Semiconductor |
KSE13009L VCE = 10V, IC = 0.5A VCC =125V, IC = 8A IB1 = - IB2 = 1.6A RL = 15,6Ω 4 1.1 3 0.7 180 8 6 Min. 400 Typ. Max. 1 40 30 1 1.5 3 1.2 1.6 V V V V V pF MHz µs µs µs Units V mA VBE(sat) Cob fT tON tSTG tF Base-Emitter Saturation Voltage Output Capacitance |
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Fairchild Semiconductor |
NPN Silicon Transistor uty Cycle≤2% IC = 10mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCB = 10V , f = 0.1MHz VCE = 10V, IC = 0.5A VCC =125V, IC = 5A IB1 = - IB2 = |
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Fairchild Semiconductor |
KSE13005 2A, IB = 0.5A IC = 4A, IB = 1A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 2A IB1 = - IB2 = 0.4A RL = 62.5Ω 4 0.8 4 0.9 65 10 8 Min. 300 400 1 60 40 0.5 0.6 1 1.2 1.6 V V V V V pF MHz µs µs µs Ty |
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Fairchild Semiconductor |
NPN Silicon Transistor 0µs, Duty Cycle≤2% IC = 10mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCB = 10V , f = 0.1MHz VCE = 10V, IC = 0.5A VCC =125V, IC = 5A IB1 = - |
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Fairchild Semiconductor |
FJP13009 • High-Voltage Capability • High Switching Speed Applications • Electronic Ballast • Switching Regulator • Motor Control • Switched Mode Power Supply Description The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is |
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Fairchild Semiconductor |
IGBT • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.75 V @ IC = 30 A • High Input Impedance • RoHS Compliant Applications • Induction Heating, Microwave Oven General Description Using advanced field stop trench and shorted-anode technology |
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Fairchild Semiconductor |
NPN Silicon Transistor 12A, IB = 3A IC = 5A, IB = 1A IC = 8A, IB = 1.6A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 8A IB1 = - IB2 = 1.6A RL = 15,6Ω 4 1.1 3 0.7 180 8 6 Min. 300 400 1 40 30 1 1.5 3 1.2 1.6 V V V V V pF MHz µs µs µs Typ. Max. Units V V mA I |
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Fairchild Semiconductor |
High Voltage Fast-Switching NPN Power Transistor • High Voltage High Speed Power Switch Application • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 TO-220 1.Base 2.Collector 3.Emitter Ordering Information Part Number FJP13007TU |
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Fairchild Semiconductor |
(1.5KE Series) 1500 Watt Transient Voltage Suppressors • • • • • Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for unidirectional and 5.0 ns for bid |
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Fairchild Semiconductor |
NPN Silicon Transistor A A W °C °C hFE Classification Classification hFE* * Test on VCE = 2V, IC = 0.5A. H1 9 ~ 16 H2 14~ 21 H3 19 ~ 26 © 2007 Fairchild Semiconductor Corporation KSE13003 Rev. 1.0.0 1 www.fairchildsemi.com KSE13003 — NPN Silicon Transistor Electr |
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Fairchild Semiconductor |
NPN Silicon Transistor = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 50Ω 4 1.6 3 0.7 110 8 5 Min. 300 400 1 60 30 1 2 3 1.2 1.6 V V V V V pF MHz µs µs µs Typ. Max. Units V V mA IEBO hFE VCE(sa |
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Fairchild Semiconductor |
NPN Silicon Transistor CE = 10V, IC = 0.5A VCC =125V, IC = 8A IB1 = - IB2 = 1.6A RL = 15,6Ω 4 1.1 3 0.7 180 8 6 Min. 400 Typ. Max. 1 40 30 1 1.5 3 1.2 1.6 V V V V V pF MHz µs µs µs Units V mA VBE(sat) Cob fT tON tSTG tF Base-Emitter Saturation Voltage Output Capacitance |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 1.05 Typ.) • Ultra Low Gate Charge (Typ. Qg = 16.2 nC) • Low Eoss (Typ. 1.57 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 48.7 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability Applications • AC |
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Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor mA VCB=10V, IE=0, f=1MHz 50 4 40 Min. 400 400 7 0.1 80 0.5 V MHz pF Typ. Max. Units V V V µA hFE Classification Classification hFE R 40 ~ 65 O 55 ~ 80 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSE13001 Typical Characteristics |
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Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 112 m • Ultra Low Gate Charge (Typ. Qg = 54 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial P |
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Fairchild Semiconductor |
NPN Silicon Transistor 12A, IB = 3A IC = 5A, IB = 1A IC = 8A, IB = 1.6A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 8A IB1 = - IB2 = 1.6A RL = 15,6Ω 4 1.1 3 0.7 180 8 6 Min. 300 400 1 40 30 1 1.5 3 1.2 1.6 V V V V V pF MHz µs µs µs Typ. Max. Units V V mA I |
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Fairchild Semiconductor |
600 Watt Transient Voltage Suppressors • Glass-Passivated Junction • 600 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV minimum for Unidirectional and |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 Ω (Typ.) IRFR/U130A BVDSS = 100 V RDS(on) = 0 |
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