Fairchild 3N2 fiche technique

No.	Partie #	Fabricant	Description
1	FDPF33N25T	Fairchild Semiconductor	N-Channel MOSFET • • • • • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V Low gate charge ( typical 36.8 nC) Low Crss ( typical 39 pF) Fast switching Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced usin
2	FQP3N25	Fairchild Semiconductor	250V N-Channel MOSFET • • • • • • 2.8A, 250V, RDS(on) = 2.2Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 4.7 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings
3	3N248	Fairchild	1.5Ampere Bridge Rectifiers • Surge overload rating: 50 amperes peak. • Reliable low cost construction utilizing molded plastic technique. • UL certified, UL #E111753. Bridge Rectifiers +~ ~ - KBPM Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter
4	3N256	Fairchild Semiconductor	(3N253 - 3N259) Bridge Rectifiers • Surge overload rating: 60 amperes peak. • Reliable low cost construction utilizing molded plastic technique. • UL certified, UL #E111753. + ~ ~ _ KBPM * The nodules on the package may not be present on the actual parts. Absolute Maximum Ratings
5	3N257	Fairchild Semiconductor	(3N253 - 3N259) Bridge Rectifiers • Surge overload rating: 60 amperes peak. • Reliable low cost construction utilizing molded plastic technique. • UL certified, UL #E111753. + ~ ~ _ KBPM * The nodules on the package may not be present on the actual parts. Absolute Maximum Ratings
6	3N246	Fairchild	1.5Ampere Bridge Rectifiers • Surge overload rating: 50 amperes peak. • Reliable low cost construction utilizing molded plastic technique. • UL certified, UL #E111753. Bridge Rectifiers +~ ~ - KBPM Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter
7	3N251	Fairchild	1.5Ampere Bridge Rectifiers • Surge overload rating: 50 amperes peak. • Reliable low cost construction utilizing molded plastic technique. • UL certified, UL #E111753. Bridge Rectifiers +~ ~ - KBPM Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter
8	3N252	Fairchild	1.5Ampere Bridge Rectifiers • Surge overload rating: 50 amperes peak. • Reliable low cost construction utilizing molded plastic technique. • UL certified, UL #E111753. Bridge Rectifiers +~ ~ - KBPM Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter
9	FQB3N25	Fairchild Semiconductor	250V N-Channel MOSFET • • • • • • 2.8A, 250V, RDS(on) = 2.2Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 4.7 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series
10	FQI3N25	Fairchild Semiconductor	250V N-Channel MOSFET • • • • • • 2.8A, 250V, RDS(on) = 2.2Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 4.7 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series
11	FDP33N25	Fairchild Semiconductor	N-Channel MOSFET • RDS(on) = 94 mΩ (Max.) @ VGS = 10 V, ID = 16.5 A • Low Gate Charge (Typ. 36.8 nC) • Low Crss (Typ. 39 pF) • 100% Avalanche Tested Applications • PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply November 2013 Description UniFET
12	FDB33N25	Fairchild Semiconductor	N-Channel MOSFET • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) • Low Crss ( typical 39 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description May 2006 TM These N-Channel enhancement mode power
13	3N253	Fairchild Semiconductor	(3N253 - 3N259) Bridge Rectifiers • Surge overload rating: 60 amperes peak. • Reliable low cost construction utilizing molded plastic technique. • UL certified, UL #E111753. + ~ ~ _ KBPM * The nodules on the package may not be present on the actual parts. Absolute Maximum Ratings
14	3N254	Fairchild Semiconductor	(3N253 - 3N259) Bridge Rectifiers • Surge overload rating: 60 amperes peak. • Reliable low cost construction utilizing molded plastic technique. • UL certified, UL #E111753. + ~ ~ _ KBPM * The nodules on the package may not be present on the actual parts. Absolute Maximum Ratings
15	3N255	Fairchild Semiconductor	(3N253 - 3N259) Bridge Rectifiers • Surge overload rating: 60 amperes peak. • Reliable low cost construction utilizing molded plastic technique. • UL certified, UL #E111753. + ~ ~ _ KBPM * The nodules on the package may not be present on the actual parts. Absolute Maximum Ratings
16	33N25	Fairchild Semiconductor	FDB33N25 • 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) • Low Crss ( typical 39 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect trans
17	3N247	Fairchild	1.5Ampere Bridge Rectifiers • Surge overload rating: 50 amperes peak. • Reliable low cost construction utilizing molded plastic technique. • UL certified, UL #E111753. Bridge Rectifiers +~ ~ - KBPM Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter
18	3N249	Fairchild	1.5Ampere Bridge Rectifiers • Surge overload rating: 50 amperes peak. • Reliable low cost construction utilizing molded plastic technique. • UL certified, UL #E111753. Bridge Rectifiers +~ ~ - KBPM Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter
19	3N250	Fairchild	1.5Ampere Bridge Rectifiers • Surge overload rating: 50 amperes peak. • Reliable low cost construction utilizing molded plastic technique. • UL certified, UL #E111753. Bridge Rectifiers +~ ~ - KBPM Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter
20	FQD3N25	Fairchild Semiconductor	250V N-Channel MOSFET • • • • • • 2.4A, 250V, RDS(on) = 2.2Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 4.7 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S