| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
N-Channel MOSFET • 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, ID = 6 A • Low Gate Charge (Typ. 48 nC) • Low Crss (Typ. 21 pF) • 100% Avalanche Tested D GDS TO-220 Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM D |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 10.5A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Rating |
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Oucan Semi |
12A N-Channel MOSFET 50 5 TC=25°C Power Dissipation B Derate above 25oC PD 278 2.2 50 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parame |
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