FMMT458 डाटा शीट PDF( Datasheet )

Features  BVCEO > 400V  IC = 225mA High Continuous Collector Current  ICM = 1A Peak Pulse Current  500mW Power Dissipation  Excellent hFE Characteristics Up To 100mA  Complementary PNP Type: F

NPN Silicon Epitaxial Planar Transistor FEATURES  High voltage.  Complementary To FMMT558. Pb Lead-free Production specification FMMT458 ORDERING INFORMATION Type No. Marking FMMT458 458 SOT-23 P