| No. | Partie # | Fabricant | Description | Fiche Technique |
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Cypress Semiconductor |
16-Kbit (2K x 8) Serial (I2C) F-RAM ■ 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability f |
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ETC |
16Kb FRAM Serial 3V Memory 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • Unlimited Read/Write Cycles • 10 year Data Retention • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface • Up to 1MHz maximum bus fre |
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Ramtron |
16Kb Serial 3V F-RAM Memory 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1014 Read/Writes • 38 year Data Retention • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface • Up to 1MHz Maximum Bus |
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