डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FLM5964-25F | C-Band Internally Matched FET w
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Fujitsu |
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FLM5964-25F | C-Band Internally Matched FET w
m C-Band Internally Matched FET o FEATURES .c • High Output Power: P1dB = 44.5dBm (Typ.) U • High Gain: G1dB = 10.0dB (Typ.) 4 t • High PAE: ηadd = 37% (Typ.) e = 33.5dBm • Low IM3 = -46dBc@Po e � |
Eudyna Devices |
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FLM5964-25F | C-Band Internally Matched FET FLM5964-25F
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB = 44.5dBm (Typ.) • High Gain: G1dB = 10.0dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 33.5dBm • Broad Ba |
SUMITOMO |
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