FKP300A डाटा शीट PDF( Datasheet )

N-Channel MOS FET FKP300A ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed June, 2007 ■Package---FM100 (TO-3P Full Mold) ■Applications ●PDP driving �

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS=300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) ·100% avalanche tested ·Minimu