FKI10300 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤28.8mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev

100 V, 23 A, 20.2 mΩ Low RDS(ON) N ch Trench Power MOSFET FKI10300 Features  V(BR)DSS --------------------------------100 V (ID = 100 µA)  ID ----------------------------------------------------------