डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FKI10126 | N-Channel MOSFET isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=41A@ TC=25℃ ·Drain Source Voltage-
: VDSS=100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =12.1mΩ(Max) ·100% avalanche tested ·Minim |
INCHANGE |
|
FKI10126 | Power MOSFET 100 V, 41 A, 8.8 mΩ Low RDS(ON) N ch Trench Power MOSFET
FKI10126
Features
V(BR)DSS --------------------------------100 V (ID = 100 µA) ID ---------------------------------------------------------- 4 |
SANKEN |
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