FKI07117 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=42A@ TC=25℃ ·Drain Source Voltage- : VDSS=75V(Min) ·Static Drain-Source On-Resistance : RDS(on) =9.7mΩ(Max) ·100% avalanche tested ·Minimum

75 V, 42 A, 7.2 mΩ Low RDS(ON) N ch Trench Power MOSFET FKI07117 Features  V(BR)DSS --------------------------------- 75 V (ID = 100 µA)  ID ---------------------------------------------------------- 4