FKI06108 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=39A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) =9.2mΩ(Max) ·100% avalanche tested ·Minimum

60 V, 39 A, 7.0 mΩ Low RDS(ON) N ch Trench Power MOSFET FKI06108 Features  V(BR)DSS --------------------------------- 60 V (ID = 100 µA)  ID ---------------------------------------------------------- 3