FKI06051 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=69A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.9mΩ(Max) ·100% avalanche tested ·Minimu

60 V, 69 A, 3.9 mΩ Low RDS(ON) N ch Trench Power MOSFET FKI06051 Features  V(BR)DSS --------------------------------- 60 V (ID = 100 µA)  ID ---------------------------------------------------------- 6