| No. | Partie # | Fabricant | Description | Fiche Technique |
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ON Semiconductor |
Silicon Carbide Schottky Diode • Max Junction Temperature 175°C • Avalanche Rated 49 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery/No Forward Recovery • AEC−Q101 Qualified • These Devices are Pb−Free, Halogen Free/B |
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