डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDS4435 | P-Channel MOSFET FDS4435
October 2001
FDS4435
30V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been opt |
Fairchild Semiconductor |
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FDS4435A | P-Channel MOSFET FDS4435A
October 2001
FDS4435A
P-Channel Logic Level PowerTrench® MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that |
Fairchild Semiconductor |
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FDS4435BZ | P-Channel PowerTrench MOSFET FDS4435BZ P-Channel PowerTrench® MOSFET
FDS4435BZ
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m:
Features
Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A |
Fairchild Semiconductor |
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FDS4435BZ | P-Channel MOSFET FDS4435BZ
MOSFET – P-Channel, POWERTRENCH)
-30 V, -8.8 A, 20 mW
Description This P−Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that has been especially tailored to m |
ON Semiconductor |
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FDS4435BZ-F085 | P-Channel Power MOSFET FDS4435BZ-F085 P-Channel PowerTrench® MOSFET
FDS4435BZ-F085
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m:
Features
Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A Max rDS(on) = 35m: at VGS = -4.5V, ID = |
ON Semiconductor |
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FDS4435BZ_F085 | P-Channel PowerTrench MOSFET FDS4435BZ_F085 P-Channel PowerTrench® MOSFET
FDS4435BZ_F085
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m:
Features
Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A Max rDS(on) = 35m: at VGS = -4.5V, ID = |
Fairchild Semiconductor |
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