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FDP2710 | 250V N-Channel MOSFET FDP2710 — N-Channel PowerTrench® MOSFET
October 2013
FDP2710
N-Channel PowerTrench® MOSFET
250 V, 50 A, 42.5 mΩ
Features
• RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A • Fast Switching Speed |
Fairchild Semiconductor |
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FDP2710 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·Drain Source Voltage-
: VDSS ≥ 250V ·Static drain-source on-resistance:
RDS(on) ≤ 42.5mΩ@VGS=10V ·100% avalanche tested ·Minimum Lo |
INCHANGE |
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FDP2710-F085 | N-Channel MOSFET FDP2710-F085 N-Channel PowerTrench® MOSFET
FDP2710-F085
N-Channel PowerTrench® MOSFET
250V, 50A, 47mΩ
General Description
Features
Typ rDS(on) = 38mΩ at VGS = 10V, ID = 50A Typ Qg(TOT) = 78nC at |
ON Semiconductor |
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