FDP085N10A डाटा शीट PDF( Datasheet )

FDP085N10A — N-Channel PowerTrench® MOSFET FDP085N10A N-Channel PowerTrench® MOSFET 100 V, 96 A, 8.5 mΩ Features • RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A • Fast Switching Speed • Low G

N-Channel Power Trench Mosfet Chip 100V, 96A, 8.5mΩ1 Part FDP085N10A V(BR)DSS 100V IDn 96A RDS(on) Max 8.5mΩ1 Die Size 2.4 x 4.4 mm2 See page 2 for ordering part numbers & supply formats FDP085N10A

FDP085N10A — N-Channel PowerTrench® MOSFET FDP085N10A N-Channel PowerTrench® MOSFET 100 V, 96 A, 8.5 mΩ November 2013 Features • RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A • Fast Switching Sp

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d