डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FDMS86263P | MOSFET FDMS86263P P-Channel PowerTrench® MOSFET
FDMS86263P
P-Channel PowerTrench® MOSFET
-150 V, -22 A, 53 mΩ
Features
Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 64 mΩ at VGS = -6 V, ID |
Fairchild Semiconductor |
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FDMS86263P | P-Channel MOSFET MOSFET – P-Channel, POWERTRENCH)
-150 V, -22 A, 53 mW
FDMS86263P
General Description This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH technology. This very high density process is esp |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |