FDMS86163P डाटा शीट PDF( Datasheet )

MOSFET – P-Channel, POWERTRENCH) -100 V, -50 A, 22 mW FDMS86163P General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to min

FDMS86163P P-Channel PowerTrench® MOSFET FDMS86163P P-Channel PowerTrench® MOSFET -100 V, -50 A, 22 mΩ Features „ Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A „ Max rDS(on) = 30 mΩ at VGS = -6 V, ID