FDB3682 डाटा शीट PDF( Datasheet )

FDB3682 / FDP3682 September 2002 FDB3682 / FDP3682 N-Channel PowerTrench® MOSFET 100V, 32A, 36mΩ Features • r DS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A • Qg(tot) = 18.5nC (Typ.), VGS = 10V • Low Mi

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: RDS(on) ≤ 36mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-

SMD Type MOSFET N-Channel PowerTrench MOSFET KDB3682 (FDB3682) Features rDS(ON) =32m (Typ.), VGS = 10V, ID =32A Qg(tot) = 18.5nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single