डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FCP260N65S3 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 260mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot va |
INCHANGE |
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FCP260N65S3 | N-Channel MOSFET FCP260N65S3
MOSFET – Power, N-Channel, SUPERFET III, Easy Drive
650 V, 12 A, 260 mW
Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is uti |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |