डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
FCH099N60E | N-Channel MOSFET isc N-Channel MOSFET Transistor
FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 99mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and re |
INCHANGE |
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FCH099N60E | N-Channel MOSFET | INCHANGE |
www.DataSheet.in | 2017 | संपर्क |