No. | Partie # | Fabricant | Description | Fiche Technique |
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Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1170 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 200 Watts Gemini Package Style AH HIGH EFFICIENCY, LI |
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Burr-Brown |
(BUF11702 / BUF07702) MULTI CHANNEL LCD GAMMA CORRECTION BUFFER D Gamma Correction Channels: 10, 6 D Integrated VCOM Buffer D Excellent Output Current Drive: − Gamma Channels: > 30mA at 0.5V Swing to Rails(1) − VCOM: > 150mA at 5V Swing to Rails(1) Large Capacitive Load Drive Capability Rail-to-Rail Output PowerP |
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Burr-Brown |
(BUF11702 / BUF07702) MULTI CHANNEL LCD GAMMA CORRECTION BUFFER D Gamma Correction Channels: 10, 6 D Integrated VCOM Buffer D Excellent Output Current Drive: − Gamma Channels: > 30mA at 0.5V Swing to Rails(1) − VCOM: > 150mA at 5V Swing to Rails(1) Large Capacitive Load Drive Capability Rail-to-Rail Output PowerP |
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Burr-Brown |
18-V SUPPLY MULTI-CHANNEL GAMMA CORRECTION BUFFER D Wide Supply Range: 4.5 V to 18 V D Gamma Correction Channels: 10, 6, and 4 D Integrated VCOM Buffer D Excellent Output Current Drive: − Gamma Channels: > 30 mA at 0.5 V Swing to Rails(1) − VCOM: > 100 mA typ at 2 V Swing to Rails(1) D Large Capacit |
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Burr-Brown |
Gamma Correction Buffer D Wide Supply Range: 7 V to 22 V D Gamma Correction Channels: 10 D Integrated VCOM Buffer D Excellent Output Current Drive: − Gamma Channels: > 30 mA at 0.5 V Swing to Rails(1) − VCOM: > 100 mA typ at 2 V Swing to Rails(1) D Large Capacitive Load Dri |
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SSDI |
Hyper Fast Rectifier Hyper fast recovery: 30 nsec maximum PIV to 900 Volts, consult factory for higher voltages Low reverse leakage current Hermetically sealed Void free construction For high efficiency applications Higher voltages available – consult fact |
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SSDI |
Hyper Fast Rectifier Hyper fast recovery: 30 nsec maximum PIV to 900 Volts, consult factory for higher voltages Low reverse leakage current Hermetically sealed Void free construction For high efficiency applications Higher voltages available – consult fact |
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