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F1170 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
F1170

Polyfet RF Devices
RF POWER VDMOS TRANSISTOR
gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1170 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 200 Watts Gemini Package Style AH HIGH EFFICIENCY, LI
Datasheet
2
BUF11702

Burr-Brown
(BUF11702 / BUF07702) MULTI CHANNEL LCD GAMMA CORRECTION BUFFER
D Gamma Correction Channels: 10, 6 D Integrated VCOM Buffer D Excellent Output Current Drive: − Gamma Channels: > 30mA at 0.5V Swing to Rails(1) − VCOM: > 150mA at 5V Swing to Rails(1) Large Capacitive Load Drive Capability Rail-to-Rail Output PowerP
Datasheet
3
BUF07702

Burr-Brown
(BUF11702 / BUF07702) MULTI CHANNEL LCD GAMMA CORRECTION BUFFER
D Gamma Correction Channels: 10, 6 D Integrated VCOM Buffer D Excellent Output Current Drive: − Gamma Channels: > 30mA at 0.5V Swing to Rails(1) − VCOM: > 150mA at 5V Swing to Rails(1) Large Capacitive Load Drive Capability Rail-to-Rail Output PowerP
Datasheet
4
BUF11704

Burr-Brown
18-V SUPPLY MULTI-CHANNEL GAMMA CORRECTION BUFFER
D Wide Supply Range: 4.5 V to 18 V D Gamma Correction Channels: 10, 6, and 4 D Integrated VCOM Buffer D Excellent Output Current Drive: − Gamma Channels: > 30 mA at 0.5 V Swing to Rails(1) − VCOM: > 100 mA typ at 2 V Swing to Rails(1) D Large Capacit
Datasheet
5
BUF11705

Burr-Brown
Gamma Correction Buffer
D Wide Supply Range: 7 V to 22 V D Gamma Correction Channels: 10 D Integrated VCOM Buffer D Excellent Output Current Drive: − Gamma Channels: > 30 mA at 0.5 V Swing to Rails(1) − VCOM: > 100 mA typ at 2 V Swing to Rails(1) D Large Capacitive Load Dri
Datasheet
6
SHF1170SMS

SSDI
Hyper Fast Rectifier

 Hyper fast recovery: 30 nsec maximum
 PIV to 900 Volts, consult factory for higher voltages
 Low reverse leakage current
 Hermetically sealed
 Void free construction
 For high efficiency applications
 Higher voltages available
  – consult fact
Datasheet
7
SHF1170

SSDI
Hyper Fast Rectifier

 Hyper fast recovery: 30 nsec maximum
 PIV to 900 Volts, consult factory for higher voltages
 Low reverse leakage current
 Hermetically sealed
 Void free construction
 For high efficiency applications
 Higher voltages available
  – consult fact
Datasheet



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