डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
F10N60 | 10A 600V N-channel Enhancement Mode Power MOSFET 10A 600V N-channel Enhancement Mode Power MOSFET
F10N60
1 Description
These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve sw |
ROUM |
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F10N60 | 600V N-Channel Enhancement Mode MOSFET PJP10N60 / PJF10N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 10A , 600V, R DS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized |
Pan Jit International |
www.DataSheet.in | 2017 | संपर्क |